Increased field-emission site density from regrown carbon nanotube films
Abstract
Electron field-emission properties of as-grown, etched, and regrown carbon nanotube thin films were investigated. The aligned carbon nanotube films were deposited by the microwave plasma-assisted chemical vapor deposition technique. The surface of the as-grown film contained a carbon nanotube mat of amorphous carbon and entangled nanotubes with some tubes protruding from the surface. Hydrogen plasma etching resulted in the removal of the surface layer, and regrowth on the etched surface displayed the formation of a new carbon nanotube mat. The emission site density and the current-voltage dependence of the field emission from all of the samples were analyzed. The results showed that the as-grown sample had a few strong emission spots and a relatively high emission current density ({approx}20 {mu}A/cm{sup 2} at 1 V/{mu}m), while the regrown sample exhibited a significantly increased emission site density.
- Authors:
-
- Department of Physics, North Carolina State University, Raleigh, North Carolina 27695-8202 (United States)
- Publication Date:
- OSTI Identifier:
- 20709667
- Resource Type:
- Journal Article
- Journal Name:
- Journal of Applied Physics
- Additional Journal Information:
- Journal Volume: 97; Journal Issue: 10; Other Information: DOI: 10.1063/1.1897836; (c) 2005 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; CARBON; CHEMICAL VAPOR DEPOSITION; CURRENT DENSITY; ELECTRIC POTENTIAL; ELECTRON EMISSION; ETCHING; FIELD EMISSION; HYDROGEN; LAYERS; MICROWAVE RADIATION; NANOTUBES; PLASMA; SPUTTERING; SURFACES; THIN FILMS
Citation Formats
Wang, Y Y, Gupta, S, Liang, M, and Nemanich, R J. Increased field-emission site density from regrown carbon nanotube films. United States: N. p., 2005.
Web. doi:10.1063/1.1897836.
Wang, Y Y, Gupta, S, Liang, M, & Nemanich, R J. Increased field-emission site density from regrown carbon nanotube films. United States. https://doi.org/10.1063/1.1897836
Wang, Y Y, Gupta, S, Liang, M, and Nemanich, R J. 2005.
"Increased field-emission site density from regrown carbon nanotube films". United States. https://doi.org/10.1063/1.1897836.
@article{osti_20709667,
title = {Increased field-emission site density from regrown carbon nanotube films},
author = {Wang, Y Y and Gupta, S and Liang, M and Nemanich, R J},
abstractNote = {Electron field-emission properties of as-grown, etched, and regrown carbon nanotube thin films were investigated. The aligned carbon nanotube films were deposited by the microwave plasma-assisted chemical vapor deposition technique. The surface of the as-grown film contained a carbon nanotube mat of amorphous carbon and entangled nanotubes with some tubes protruding from the surface. Hydrogen plasma etching resulted in the removal of the surface layer, and regrowth on the etched surface displayed the formation of a new carbon nanotube mat. The emission site density and the current-voltage dependence of the field emission from all of the samples were analyzed. The results showed that the as-grown sample had a few strong emission spots and a relatively high emission current density ({approx}20 {mu}A/cm{sup 2} at 1 V/{mu}m), while the regrown sample exhibited a significantly increased emission site density.},
doi = {10.1063/1.1897836},
url = {https://www.osti.gov/biblio/20709667},
journal = {Journal of Applied Physics},
issn = {0021-8979},
number = 10,
volume = 97,
place = {United States},
year = {Sun May 15 00:00:00 EDT 2005},
month = {Sun May 15 00:00:00 EDT 2005}
}