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Title: Electrical and optical characterization of 4H-SiC diodes for particle detection

Abstract

The electronic and optical properties of several (medium to high quality) 4H-SiC epitaxial sensors for particle detection have been studied. The samples are n-doped Schottky diodes with different nitrogen concentrations (6x10{sup 13} cm{sup -3}-5x10{sup 15} cm{sup -3}) and thicknesses (20-40 {mu}m). A full electrical and optical characterization has been performed by capacitance versus voltage measurements and near-band-edge low-temperature photoluminescence. The effective doping along the epilayer and the depletion width have been determined and data are consistent with the charge collection efficiency characterization performed with a minimum ionizing {beta}-source. All the investigated samples exhibit a 100% collection efficiency. In particular, the best samples yield a highly reproducible signal, well separated from the pedestal. Photoluminescence results show a linear relationship between the effective doping and the ratio of nitrogen-bound excitonic emission (Q{sub 0}) and free excitonic line (I{sub 76}), in agreement with a previous work on 4H-SiC with a higher doping concentration [I. G. Ivanov, C. Hallin, A. Henry, O. Kordina, and E. Janzen, J. Appl. Phys. 80, 3504 (1996)]. Moreover we show that the dependence of the major spectral features as a function of the penetration depth of the exciting laser beam can quantitatively provide information on substrate contribution to themore » photoluminescence. In conclusion, we bring evidence that a detailed characterization of SiC-based detectors, by all optical techniques, yields an accurate value for the net doping and gives a qualitative information on the epilayer thickness prior to any electrical wafer tests.« less

Authors:
; ; ; ; ; ;  [1];  [2];  [3]
  1. Department of Physics, University of Florence, Via Sansone 1, I-50019 Sesto Fiorentino (Italy)
  2. (INFN), University of Florence, Via di Santa Marta 3, I-50139 Florence (Italy)
  3. (Italy)
Publication Date:
OSTI Identifier:
20709652
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 97; Journal Issue: 10; Other Information: DOI: 10.1063/1.1906294; (c) 2005 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CAPACITANCE; CHARGE COLLECTION; CHARGED PARTICLE DETECTION; DOPED MATERIALS; ELECTRIC POTENTIAL; ELECTRONIC STRUCTURE; EPITAXY; LAYERS; NITROGEN; OPTICAL PROPERTIES; PENETRATION DEPTH; PHOTOLUMINESCENCE; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR MATERIALS; SIGNALS; SILICON CARBIDES; SUBSTRATES

Citation Formats

Schifano, Ramon, Vinattieri, Anna, Bruzzi, Mara, Miglio, Stefania, Lagomarsino, Stefano, Sciortino, Silvio, Nava, Filippo, Department of Energetics and Istituto Nazionale di Fisica Nucleare, and Department of Physics, University of Modena, Via Campi 213A, I-41100 Modena. Electrical and optical characterization of 4H-SiC diodes for particle detection. United States: N. p., 2005. Web. doi:10.1063/1.1906294.
Schifano, Ramon, Vinattieri, Anna, Bruzzi, Mara, Miglio, Stefania, Lagomarsino, Stefano, Sciortino, Silvio, Nava, Filippo, Department of Energetics and Istituto Nazionale di Fisica Nucleare, & Department of Physics, University of Modena, Via Campi 213A, I-41100 Modena. Electrical and optical characterization of 4H-SiC diodes for particle detection. United States. doi:10.1063/1.1906294.
Schifano, Ramon, Vinattieri, Anna, Bruzzi, Mara, Miglio, Stefania, Lagomarsino, Stefano, Sciortino, Silvio, Nava, Filippo, Department of Energetics and Istituto Nazionale di Fisica Nucleare, and Department of Physics, University of Modena, Via Campi 213A, I-41100 Modena. 2005. "Electrical and optical characterization of 4H-SiC diodes for particle detection". United States. doi:10.1063/1.1906294.
@article{osti_20709652,
title = {Electrical and optical characterization of 4H-SiC diodes for particle detection},
author = {Schifano, Ramon and Vinattieri, Anna and Bruzzi, Mara and Miglio, Stefania and Lagomarsino, Stefano and Sciortino, Silvio and Nava, Filippo and Department of Energetics and Istituto Nazionale di Fisica Nucleare and Department of Physics, University of Modena, Via Campi 213A, I-41100 Modena},
abstractNote = {The electronic and optical properties of several (medium to high quality) 4H-SiC epitaxial sensors for particle detection have been studied. The samples are n-doped Schottky diodes with different nitrogen concentrations (6x10{sup 13} cm{sup -3}-5x10{sup 15} cm{sup -3}) and thicknesses (20-40 {mu}m). A full electrical and optical characterization has been performed by capacitance versus voltage measurements and near-band-edge low-temperature photoluminescence. The effective doping along the epilayer and the depletion width have been determined and data are consistent with the charge collection efficiency characterization performed with a minimum ionizing {beta}-source. All the investigated samples exhibit a 100% collection efficiency. In particular, the best samples yield a highly reproducible signal, well separated from the pedestal. Photoluminescence results show a linear relationship between the effective doping and the ratio of nitrogen-bound excitonic emission (Q{sub 0}) and free excitonic line (I{sub 76}), in agreement with a previous work on 4H-SiC with a higher doping concentration [I. G. Ivanov, C. Hallin, A. Henry, O. Kordina, and E. Janzen, J. Appl. Phys. 80, 3504 (1996)]. Moreover we show that the dependence of the major spectral features as a function of the penetration depth of the exciting laser beam can quantitatively provide information on substrate contribution to the photoluminescence. In conclusion, we bring evidence that a detailed characterization of SiC-based detectors, by all optical techniques, yields an accurate value for the net doping and gives a qualitative information on the epilayer thickness prior to any electrical wafer tests.},
doi = {10.1063/1.1906294},
journal = {Journal of Applied Physics},
number = 10,
volume = 97,
place = {United States},
year = 2005,
month = 5
}
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