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Title: Density of defect states of aluminum nitride grown on silicon and silicon carbide substrates at room temperature

Abstract

Density of defect states of aluminum nitride (AlN) films deposited by rf magnetron sputtering on <100>-oriented silicon (Si) and 4H-silicon carbide (4H-SiC) have been investigated using the deep-level-transient-spectroscopy technique. The films were grown at room temperature with varying nitrogen flow from 4 to 20 sccm and a constant argon flow of 10 sccm. In general the defect densities of AlN are lower when grown on 4H-SiC substrates than on Si substrates. The observed defect levels are identified as donor-like triplet of nitrogen vacancy and DX-like centers. Defects located at 0.35-0.42 eV below the conduction band, attributed to dangling bonds of nitrogen atoms, are seen in samples grown with higher nitrogen flow rate. Shallow level defects, observed at approximately 0.1 eV below the conduction band, can be attributed to the recently discovered prismatic staking fault in the AlN atomic structure.

Authors:
; ;  [1]
  1. School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore 639798 (Singapore)
Publication Date:
OSTI Identifier:
20706490
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 87; Journal Issue: 24; Other Information: DOI: 10.1063/1.2140888; (c) 2005 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ALUMINIUM NITRIDES; ARGON; CRYSTAL GROWTH; DEEP LEVEL TRANSIENT SPECTROSCOPY; DEPOSITION; FLOW RATE; MILLI EV RANGE; NITROGEN; SEMICONDUCTOR MATERIALS; SILICON; SILICON CARBIDES; SPUTTERING; STACKING FAULTS; SUBSTRATES; TEMPERATURE RANGE 0273-0400 K; THIN FILMS; TRIPLETS; VACANCIES

Citation Formats

Ligatchev, V., Rusli,, and Pan Zhao. Density of defect states of aluminum nitride grown on silicon and silicon carbide substrates at room temperature. United States: N. p., 2005. Web. doi:10.1063/1.2140888.
Ligatchev, V., Rusli,, & Pan Zhao. Density of defect states of aluminum nitride grown on silicon and silicon carbide substrates at room temperature. United States. doi:10.1063/1.2140888.
Ligatchev, V., Rusli,, and Pan Zhao. Mon . "Density of defect states of aluminum nitride grown on silicon and silicon carbide substrates at room temperature". United States. doi:10.1063/1.2140888.
@article{osti_20706490,
title = {Density of defect states of aluminum nitride grown on silicon and silicon carbide substrates at room temperature},
author = {Ligatchev, V. and Rusli, and Pan Zhao},
abstractNote = {Density of defect states of aluminum nitride (AlN) films deposited by rf magnetron sputtering on <100>-oriented silicon (Si) and 4H-silicon carbide (4H-SiC) have been investigated using the deep-level-transient-spectroscopy technique. The films were grown at room temperature with varying nitrogen flow from 4 to 20 sccm and a constant argon flow of 10 sccm. In general the defect densities of AlN are lower when grown on 4H-SiC substrates than on Si substrates. The observed defect levels are identified as donor-like triplet of nitrogen vacancy and DX-like centers. Defects located at 0.35-0.42 eV below the conduction band, attributed to dangling bonds of nitrogen atoms, are seen in samples grown with higher nitrogen flow rate. Shallow level defects, observed at approximately 0.1 eV below the conduction band, can be attributed to the recently discovered prismatic staking fault in the AlN atomic structure.},
doi = {10.1063/1.2140888},
journal = {Applied Physics Letters},
number = 24,
volume = 87,
place = {United States},
year = {Mon Dec 12 00:00:00 EST 2005},
month = {Mon Dec 12 00:00:00 EST 2005}
}