Band gap tuning of InAs/InP quantum sticks using low-energy ion-implantation-induced intermixing
- Centre de Recherche en Nanofabrication et Nanocaracterisation (CRN2), Universite de Sherbrooke (Quebec) J1K 2R1 (Canada)
Low-energy (18 keV) phosphorus ion implantation and rapid thermal annealing at 650 deg. C for 120 s were used to create point defects and promote intermixing in InAs/InP quantum stick structures grown by molecular beam epitaxy. With these soft conditions for ion-implantation-induced intermixing, photoluminescence measurements at low temperature show a very large blueshift up to 350 nm and a narrow emission linewidth (down to 30 nm for ion dose equal to 5x10{sup 13} cm{sup -2}). The band gap tuning limit in this system was evaluated using implantation of phosphorus ions at various doses (1x10{sup 11}-5x10{sup 14} cm{sup -2}), at a temperature of 200 deg. C followed by rapid thermal annealing.
- OSTI ID:
- 20706476
- Journal Information:
- Applied Physics Letters, Vol. 87, Issue 24; Other Information: DOI: 10.1063/1.2142330; (c) 2005 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
36 MATERIALS SCIENCE
ANNEALING
CRYSTAL GROWTH
ENERGY GAP
INDIUM ARSENIDES
INDIUM PHOSPHIDES
ION IMPLANTATION
KEV RANGE 10-100
MOLECULAR BEAM EPITAXY
MOLECULAR STRUCTURE
NANOSTRUCTURES
PHOSPHORUS IONS
PHOTOLUMINESCENCE
POINT DEFECTS
SEMICONDUCTOR MATERIALS
SPECTRAL SHIFT
TEMPERATURE RANGE 0400-1000 K
ANNEALING
CRYSTAL GROWTH
ENERGY GAP
INDIUM ARSENIDES
INDIUM PHOSPHIDES
ION IMPLANTATION
KEV RANGE 10-100
MOLECULAR BEAM EPITAXY
MOLECULAR STRUCTURE
NANOSTRUCTURES
PHOSPHORUS IONS
PHOTOLUMINESCENCE
POINT DEFECTS
SEMICONDUCTOR MATERIALS
SPECTRAL SHIFT
TEMPERATURE RANGE 0400-1000 K