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Title: Band gap tuning of InAs/InP quantum sticks using low-energy ion-implantation-induced intermixing

Abstract

Low-energy (18 keV) phosphorus ion implantation and rapid thermal annealing at 650 deg. C for 120 s were used to create point defects and promote intermixing in InAs/InP quantum stick structures grown by molecular beam epitaxy. With these soft conditions for ion-implantation-induced intermixing, photoluminescence measurements at low temperature show a very large blueshift up to 350 nm and a narrow emission linewidth (down to 30 nm for ion dose equal to 5x10{sup 13} cm{sup -2}). The band gap tuning limit in this system was evaluated using implantation of phosphorus ions at various doses (1x10{sup 11}-5x10{sup 14} cm{sup -2}), at a temperature of 200 deg. C followed by rapid thermal annealing.

Authors:
; ; ; ; ;  [1];  [2]
  1. Centre de Recherche en Nanofabrication et Nanocaracterisation (CRN2), Universite de Sherbrooke (Quebec) J1K 2R1 (Canada)
  2. (France)
Publication Date:
OSTI Identifier:
20706476
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 87; Journal Issue: 24; Other Information: DOI: 10.1063/1.2142330; (c) 2005 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ANNEALING; CRYSTAL GROWTH; ENERGY GAP; INDIUM ARSENIDES; INDIUM PHOSPHIDES; ION IMPLANTATION; KEV RANGE 10-100; MOLECULAR BEAM EPITAXY; MOLECULAR STRUCTURE; NANOSTRUCTURES; PHOSPHORUS IONS; PHOTOLUMINESCENCE; POINT DEFECTS; SEMICONDUCTOR MATERIALS; SPECTRAL SHIFT; TEMPERATURE RANGE 0400-1000 K

Citation Formats

Salem, B., Aimez, V., Morris, D., Turala, A., Regreny, P., Gendry, M., and Laboratoire d'Electronique, Optoelectronique et Microsystemes - LEOM, UMR CNRS 5512, Ecole Centrale de Lyon, 36 Avenue Guy de Collongue, 69134 Ecully Cedex. Band gap tuning of InAs/InP quantum sticks using low-energy ion-implantation-induced intermixing. United States: N. p., 2005. Web. doi:10.1063/1.2142330.
Salem, B., Aimez, V., Morris, D., Turala, A., Regreny, P., Gendry, M., & Laboratoire d'Electronique, Optoelectronique et Microsystemes - LEOM, UMR CNRS 5512, Ecole Centrale de Lyon, 36 Avenue Guy de Collongue, 69134 Ecully Cedex. Band gap tuning of InAs/InP quantum sticks using low-energy ion-implantation-induced intermixing. United States. doi:10.1063/1.2142330.
Salem, B., Aimez, V., Morris, D., Turala, A., Regreny, P., Gendry, M., and Laboratoire d'Electronique, Optoelectronique et Microsystemes - LEOM, UMR CNRS 5512, Ecole Centrale de Lyon, 36 Avenue Guy de Collongue, 69134 Ecully Cedex. Mon . "Band gap tuning of InAs/InP quantum sticks using low-energy ion-implantation-induced intermixing". United States. doi:10.1063/1.2142330.
@article{osti_20706476,
title = {Band gap tuning of InAs/InP quantum sticks using low-energy ion-implantation-induced intermixing},
author = {Salem, B. and Aimez, V. and Morris, D. and Turala, A. and Regreny, P. and Gendry, M. and Laboratoire d'Electronique, Optoelectronique et Microsystemes - LEOM, UMR CNRS 5512, Ecole Centrale de Lyon, 36 Avenue Guy de Collongue, 69134 Ecully Cedex},
abstractNote = {Low-energy (18 keV) phosphorus ion implantation and rapid thermal annealing at 650 deg. C for 120 s were used to create point defects and promote intermixing in InAs/InP quantum stick structures grown by molecular beam epitaxy. With these soft conditions for ion-implantation-induced intermixing, photoluminescence measurements at low temperature show a very large blueshift up to 350 nm and a narrow emission linewidth (down to 30 nm for ion dose equal to 5x10{sup 13} cm{sup -2}). The band gap tuning limit in this system was evaluated using implantation of phosphorus ions at various doses (1x10{sup 11}-5x10{sup 14} cm{sup -2}), at a temperature of 200 deg. C followed by rapid thermal annealing.},
doi = {10.1063/1.2142330},
journal = {Applied Physics Letters},
number = 24,
volume = 87,
place = {United States},
year = {Mon Dec 12 00:00:00 EST 2005},
month = {Mon Dec 12 00:00:00 EST 2005}
}