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Title: Low-temperature crystallized pyrochlore bismuth zinc niobate thin films by excimer laser annealing

Abstract

The crystallization temperature of Bi{sub 1.5}Zn{sub 0.5}Nb{sub 1.5}O{sub 6.5} (BZN) films was reduced by a combination of conventional heating and irradiation with a pulsed KrF excimer laser. Both the energy density and substrate temperature affect the properties of laser-annealed BZN films. It was found that the crystallinity and dielectric properties improved after a postannealing at 400 deg. C for 2 h in an oxygen atmosphere. BZN films crystallized with an energy density of 27 mJ/cm{sup 2} at a substrate temperature of 400 deg. C with postannealing showed dielectric properties comparable to those of rapid thermal annealed BZN films. Laser crystallization at substrate temperatures {<=}400 deg. C makes integration with polymeric substrates possible.

Authors:
; ; ;  [1]
  1. Materials Research Institute, Pennsylvania State University, University Park, Pennsylvania 16802 (United States)
Publication Date:
OSTI Identifier:
20706468
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 87; Journal Issue: 23; Other Information: DOI: 10.1063/1.2140071; (c) 2005 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ANNEALING; ATMOSPHERES; BISMUTH COMPOUNDS; CRYSTALLIZATION; DIELECTRIC MATERIALS; ENERGY DENSITY; HEATING; IRRADIATION; KRYPTON FLUORIDE LASERS; NIOBATES; OXYGEN; PERMITTIVITY; PYROCHLORE; REFRACTIVE INDEX; SUBSTRATES; TEMPERATURE RANGE 0400-1000 K; THIN FILMS; ZINC COMPOUNDS

Citation Formats

Cheng, J.-G., Wang Junling, Dechakupt, Tanawadee, and Trolier-McKinstry, Susan. Low-temperature crystallized pyrochlore bismuth zinc niobate thin films by excimer laser annealing. United States: N. p., 2005. Web. doi:10.1063/1.2140071.
Cheng, J.-G., Wang Junling, Dechakupt, Tanawadee, & Trolier-McKinstry, Susan. Low-temperature crystallized pyrochlore bismuth zinc niobate thin films by excimer laser annealing. United States. doi:10.1063/1.2140071.
Cheng, J.-G., Wang Junling, Dechakupt, Tanawadee, and Trolier-McKinstry, Susan. Mon . "Low-temperature crystallized pyrochlore bismuth zinc niobate thin films by excimer laser annealing". United States. doi:10.1063/1.2140071.
@article{osti_20706468,
title = {Low-temperature crystallized pyrochlore bismuth zinc niobate thin films by excimer laser annealing},
author = {Cheng, J.-G. and Wang Junling and Dechakupt, Tanawadee and Trolier-McKinstry, Susan},
abstractNote = {The crystallization temperature of Bi{sub 1.5}Zn{sub 0.5}Nb{sub 1.5}O{sub 6.5} (BZN) films was reduced by a combination of conventional heating and irradiation with a pulsed KrF excimer laser. Both the energy density and substrate temperature affect the properties of laser-annealed BZN films. It was found that the crystallinity and dielectric properties improved after a postannealing at 400 deg. C for 2 h in an oxygen atmosphere. BZN films crystallized with an energy density of 27 mJ/cm{sup 2} at a substrate temperature of 400 deg. C with postannealing showed dielectric properties comparable to those of rapid thermal annealed BZN films. Laser crystallization at substrate temperatures {<=}400 deg. C makes integration with polymeric substrates possible.},
doi = {10.1063/1.2140071},
journal = {Applied Physics Letters},
number = 23,
volume = 87,
place = {United States},
year = {Mon Dec 05 00:00:00 EST 2005},
month = {Mon Dec 05 00:00:00 EST 2005}
}