skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: GaAs-based room-temperature continuous-wave 1.59 {mu}m GaInNAsSb single-quantum-well laser diode grown by molecular-beam epitaxy

Abstract

Starting from the growth of high-quality 1.3 {mu}m GaInNAs/GaAs quantum well (QW), the QW emission wavelength has been extended up to 1.55 {mu}m by a combination of lowering growth rate, using GaNAs barriers and incorporating some amount of Sb. The photoluminescence properties of 1.5 {mu}m range GaInNAsSb/GaNAs QWs are quite comparable to the 1.3 {mu}m QWs, revealing positive effect of Sb on improving the optical quality of the QWs. A 1.59 {mu}m lasing of a GaInNAsSb/GaNAs single-QW laser diode is obtained under continuous current injection at room temperature. The threshold current density is 2.6 kA/cm{sup 2} with as-cleaved facet mirrors.

Authors:
; ; ; ; ; ; ; ; ; ; ; ; ;  [1];  [2]
  1. State Key Laboratory for Superlattice and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China)
  2. (China)
Publication Date:
OSTI Identifier:
20706463
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 87; Journal Issue: 23; Other Information: DOI: 10.1063/1.2140614; (c) 2005 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ANTIMONY COMPOUNDS; CAVITY RESONATORS; CRYSTAL GROWTH; GALLIUM ARSENIDES; INDIUM ARSENIDES; LASER CAVITIES; LASER MIRRORS; MOLECULAR BEAM EPITAXY; NITROGEN COMPOUNDS; PHOTOLUMINESCENCE; QUANTUM WELLS; SEMICONDUCTOR MATERIALS; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE 0273-0400 K; THRESHOLD CURRENT

Citation Formats

Niu, Z.C., Zhang, S.Y., Ni, H.Q., Wu, D.H., Zhao, H., Peng, H.L., Xu, Y.Q., Li, S.Y., He, Z.H., Ren, Z.W., Han, Q., Yang, X.H., Du, Y., Wu, R.H., and State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083. GaAs-based room-temperature continuous-wave 1.59 {mu}m GaInNAsSb single-quantum-well laser diode grown by molecular-beam epitaxy. United States: N. p., 2005. Web. doi:10.1063/1.2140614.
Niu, Z.C., Zhang, S.Y., Ni, H.Q., Wu, D.H., Zhao, H., Peng, H.L., Xu, Y.Q., Li, S.Y., He, Z.H., Ren, Z.W., Han, Q., Yang, X.H., Du, Y., Wu, R.H., & State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083. GaAs-based room-temperature continuous-wave 1.59 {mu}m GaInNAsSb single-quantum-well laser diode grown by molecular-beam epitaxy. United States. doi:10.1063/1.2140614.
Niu, Z.C., Zhang, S.Y., Ni, H.Q., Wu, D.H., Zhao, H., Peng, H.L., Xu, Y.Q., Li, S.Y., He, Z.H., Ren, Z.W., Han, Q., Yang, X.H., Du, Y., Wu, R.H., and State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083. Mon . "GaAs-based room-temperature continuous-wave 1.59 {mu}m GaInNAsSb single-quantum-well laser diode grown by molecular-beam epitaxy". United States. doi:10.1063/1.2140614.
@article{osti_20706463,
title = {GaAs-based room-temperature continuous-wave 1.59 {mu}m GaInNAsSb single-quantum-well laser diode grown by molecular-beam epitaxy},
author = {Niu, Z.C. and Zhang, S.Y. and Ni, H.Q. and Wu, D.H. and Zhao, H. and Peng, H.L. and Xu, Y.Q. and Li, S.Y. and He, Z.H. and Ren, Z.W. and Han, Q. and Yang, X.H. and Du, Y. and Wu, R.H. and State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083},
abstractNote = {Starting from the growth of high-quality 1.3 {mu}m GaInNAs/GaAs quantum well (QW), the QW emission wavelength has been extended up to 1.55 {mu}m by a combination of lowering growth rate, using GaNAs barriers and incorporating some amount of Sb. The photoluminescence properties of 1.5 {mu}m range GaInNAsSb/GaNAs QWs are quite comparable to the 1.3 {mu}m QWs, revealing positive effect of Sb on improving the optical quality of the QWs. A 1.59 {mu}m lasing of a GaInNAsSb/GaNAs single-QW laser diode is obtained under continuous current injection at room temperature. The threshold current density is 2.6 kA/cm{sup 2} with as-cleaved facet mirrors.},
doi = {10.1063/1.2140614},
journal = {Applied Physics Letters},
number = 23,
volume = 87,
place = {United States},
year = {Mon Dec 05 00:00:00 EST 2005},
month = {Mon Dec 05 00:00:00 EST 2005}
}