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Title: GaAs-based room-temperature continuous-wave 1.59 {mu}m GaInNAsSb single-quantum-well laser diode grown by molecular-beam epitaxy

Abstract

Starting from the growth of high-quality 1.3 {mu}m GaInNAs/GaAs quantum well (QW), the QW emission wavelength has been extended up to 1.55 {mu}m by a combination of lowering growth rate, using GaNAs barriers and incorporating some amount of Sb. The photoluminescence properties of 1.5 {mu}m range GaInNAsSb/GaNAs QWs are quite comparable to the 1.3 {mu}m QWs, revealing positive effect of Sb on improving the optical quality of the QWs. A 1.59 {mu}m lasing of a GaInNAsSb/GaNAs single-QW laser diode is obtained under continuous current injection at room temperature. The threshold current density is 2.6 kA/cm{sup 2} with as-cleaved facet mirrors.

Authors:
; ; ; ; ; ; ; ; ; ; ; ; ;  [1];  [2]
  1. State Key Laboratory for Superlattice and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China)
  2. (China)
Publication Date:
OSTI Identifier:
20706463
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 87; Journal Issue: 23; Other Information: DOI: 10.1063/1.2140614; (c) 2005 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ANTIMONY COMPOUNDS; CAVITY RESONATORS; CRYSTAL GROWTH; GALLIUM ARSENIDES; INDIUM ARSENIDES; LASER CAVITIES; LASER MIRRORS; MOLECULAR BEAM EPITAXY; NITROGEN COMPOUNDS; PHOTOLUMINESCENCE; QUANTUM WELLS; SEMICONDUCTOR MATERIALS; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE 0273-0400 K; THRESHOLD CURRENT

Citation Formats

Niu, Z.C., Zhang, S.Y., Ni, H.Q., Wu, D.H., Zhao, H., Peng, H.L., Xu, Y.Q., Li, S.Y., He, Z.H., Ren, Z.W., Han, Q., Yang, X.H., Du, Y., Wu, R.H., and State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083. GaAs-based room-temperature continuous-wave 1.59 {mu}m GaInNAsSb single-quantum-well laser diode grown by molecular-beam epitaxy. United States: N. p., 2005. Web. doi:10.1063/1.2140614.
Niu, Z.C., Zhang, S.Y., Ni, H.Q., Wu, D.H., Zhao, H., Peng, H.L., Xu, Y.Q., Li, S.Y., He, Z.H., Ren, Z.W., Han, Q., Yang, X.H., Du, Y., Wu, R.H., & State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083. GaAs-based room-temperature continuous-wave 1.59 {mu}m GaInNAsSb single-quantum-well laser diode grown by molecular-beam epitaxy. United States. doi:10.1063/1.2140614.
Niu, Z.C., Zhang, S.Y., Ni, H.Q., Wu, D.H., Zhao, H., Peng, H.L., Xu, Y.Q., Li, S.Y., He, Z.H., Ren, Z.W., Han, Q., Yang, X.H., Du, Y., Wu, R.H., and State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083. Mon . "GaAs-based room-temperature continuous-wave 1.59 {mu}m GaInNAsSb single-quantum-well laser diode grown by molecular-beam epitaxy". United States. doi:10.1063/1.2140614.
@article{osti_20706463,
title = {GaAs-based room-temperature continuous-wave 1.59 {mu}m GaInNAsSb single-quantum-well laser diode grown by molecular-beam epitaxy},
author = {Niu, Z.C. and Zhang, S.Y. and Ni, H.Q. and Wu, D.H. and Zhao, H. and Peng, H.L. and Xu, Y.Q. and Li, S.Y. and He, Z.H. and Ren, Z.W. and Han, Q. and Yang, X.H. and Du, Y. and Wu, R.H. and State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083},
abstractNote = {Starting from the growth of high-quality 1.3 {mu}m GaInNAs/GaAs quantum well (QW), the QW emission wavelength has been extended up to 1.55 {mu}m by a combination of lowering growth rate, using GaNAs barriers and incorporating some amount of Sb. The photoluminescence properties of 1.5 {mu}m range GaInNAsSb/GaNAs QWs are quite comparable to the 1.3 {mu}m QWs, revealing positive effect of Sb on improving the optical quality of the QWs. A 1.59 {mu}m lasing of a GaInNAsSb/GaNAs single-QW laser diode is obtained under continuous current injection at room temperature. The threshold current density is 2.6 kA/cm{sup 2} with as-cleaved facet mirrors.},
doi = {10.1063/1.2140614},
journal = {Applied Physics Letters},
number = 23,
volume = 87,
place = {United States},
year = {Mon Dec 05 00:00:00 EST 2005},
month = {Mon Dec 05 00:00:00 EST 2005}
}
  • We present the results of GaInNAs/GaAs quantum dot structures with GaAsN barrier layers grown by solid source molecular beam epitaxy. Extension of the emission wavelength of GaInNAs quantum dots by {approx}170 nm was observed in samples with GaAsN barriers in place of GaAs. However, optimization of the GaAsN barrier layer thickness is necessary to avoid degradation in luminescence intensity and structural property of the GaInNAs dots. Lasers with GaInNAs quantum dots as active layer were fabricated and room-temperature continuous-wave lasing was observed. Lasing occurs via the ground state at {approx}1.2 {mu}m, with threshold current density of 2.1 kA/cm{sup 2} andmore » maximum output power of 16 mW.« less
  • We present design, preparation by molecular beam epitaxy, and characterization by photoluminescence of long-wavelength emitting, strain-engineered quantum dot nanostructures grown on GaAs, with InGaAs confining layers and additional InAlAs barriers embedding InAs dots. Quantum dot strain induced by metamorphic lower confining layers is instrumental to redshift the emission, while a-few-nanometer thick InAlAs barriers allow to significantly increase the activation energy of carriers' thermal escape. This approach results in room temperature emission at 1.59 {mu}m and, therefore, is a viable method to achieve efficient emission in the 1.55 {mu}m window and beyond from quantum dots grown on GaAs substrates.
  • Spontaneous and stimulated emission spectrum and the different characteristics between TE and TM polarizations were investigated on a GaAs--AlGaAs multi-quantum-well (MQW) laser diode grown by molecular beam epitaxy. The MQW laser lases at 38 meV below the photoluminescence peak energy corresponding to the lowest confined electron to heavy hole recombination energy E/sub 1h/, calculated using the Kronig--Penney model. However, this energy separation cannot be interpreted in terms of the LO-phonon assisted recombination which is usually accepted. The LO-phonon assisted recombination model can be ruled out by comparing the spontaneous emission and the stimulated emission for various injection current levels. Themore » emission energy of the TE polarization was lower than that of the TM polarization. The intensity of the TE is much larger than the TM polarization. These differences can be interpreted in terms of the selection rule for the dipole recombination between confined electron to heavy hole and electron to light hole bands.« less
  • The growth by molecular-beam epitaxy of high-quality Ga/sub 0.85/In/sub 0.15/As/sub 0.13/Sb/sub 0.87/ active layers with Al/sub 0.4/Ga/sub 0.6/As/sub 0.035/Sb/sub 0.965/ cladding layers on GaSb substrates by molecular-beam epitaxy is reported. The lattice match of the active layer to the substrate is ..delta..a/a --4 x 10/sup -3/. Optically pumped laser oscillation was observed from 80 to 300 K with T/sub 0/ = 55 K for T<225 K and T/sub 0/ = 32 K for 225
  • We report on the first observation of stimulated emission from Hg-based quantum well structures in which the active region is a HgCdTe superlattice. The laser structures were grown on (100) CdZnTe substrates photoassisted molecular beam epitaxy. Cleaved laser cavities were optically pumped using the 1.06 {mu}m output from a cw Nd:YAG laser. Stimulated emission cavity modes were seen at cw laser power densities as low as 3.4 kW/cm{sup 2} and at temperatures {ge} 60 K.