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Title: Terahertz radiation from heavy-ion-irradiated In{sub 0.53}Ga{sub 0.47}As photoconductive antenna excited at 1.55 {mu}m

Abstract

We investigate terahertz (THz) emission from heavy-ion-irradiated In{sub 0.53}Ga{sub 0.47}As photoconductive antennas excited at 1550 nm. The carrier lifetime in the highly irradiated In{sub 0.53}Ga{sub 0.47}As layer is less than 200 fs, the steady-state mobility is 490 cm{sup 2} V{sup -1} s{sup -1}, and the dark resistivity is 3 {omega} cm. The spectrum of the electric field radiating from the Br{sup +}-irradiated In{sub 0.53}Ga{sub 0.47}As antenna extends beyond 2 THz. The THz electric field magnitude is shown to saturate at high optical pump fluence, and the saturation fluence level increases with the irradiation dose, indicating that defect center scattering has a significant contribution to the transient mobility.

Authors:
; ; ; ; ; ;  [1];  [2];  [2]
  1. Institut d'Electronique Fondamentale, UMR CNRS 8622, Universite Paris XI, 91405 Orsay cedex (France)
  2. (France)
Publication Date:
OSTI Identifier:
20706459
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 87; Journal Issue: 19; Other Information: DOI: 10.1063/1.2126110; (c) 2005 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ANTENNAS; CARRIER LIFETIME; CARRIER MOBILITY; ELECTRIC FIELDS; GALLIUM ARSENIDES; HEAVY IONS; INDIUM ARSENIDES; ION BEAMS; IRRADIATION; OPTICAL PUMPING; RADIATION DOSES; SCATTERING; STEADY-STATE CONDITIONS; THZ RANGE

Citation Formats

Chimot, N., Mangeney, J., Joulaud, L., Crozat, P., Bernas, H., Blary, K., Lampin, J. F., Centre de Spectrometrie Nucleaire et de Spectrometrie de Masse, UMR CNRS 8609, Universite Paris XI, 91405 Orsay cedex, and Institut d'Electronique de Microelectronique et de Nanotechnologie, UMR CNRS 8520, Cite Scientifique, 59652 Villeneuve d'Ascq cedex. Terahertz radiation from heavy-ion-irradiated In{sub 0.53}Ga{sub 0.47}As photoconductive antenna excited at 1.55 {mu}m. United States: N. p., 2005. Web. doi:10.1063/1.2126110.
Chimot, N., Mangeney, J., Joulaud, L., Crozat, P., Bernas, H., Blary, K., Lampin, J. F., Centre de Spectrometrie Nucleaire et de Spectrometrie de Masse, UMR CNRS 8609, Universite Paris XI, 91405 Orsay cedex, & Institut d'Electronique de Microelectronique et de Nanotechnologie, UMR CNRS 8520, Cite Scientifique, 59652 Villeneuve d'Ascq cedex. Terahertz radiation from heavy-ion-irradiated In{sub 0.53}Ga{sub 0.47}As photoconductive antenna excited at 1.55 {mu}m. United States. doi:10.1063/1.2126110.
Chimot, N., Mangeney, J., Joulaud, L., Crozat, P., Bernas, H., Blary, K., Lampin, J. F., Centre de Spectrometrie Nucleaire et de Spectrometrie de Masse, UMR CNRS 8609, Universite Paris XI, 91405 Orsay cedex, and Institut d'Electronique de Microelectronique et de Nanotechnologie, UMR CNRS 8520, Cite Scientifique, 59652 Villeneuve d'Ascq cedex. Mon . "Terahertz radiation from heavy-ion-irradiated In{sub 0.53}Ga{sub 0.47}As photoconductive antenna excited at 1.55 {mu}m". United States. doi:10.1063/1.2126110.
@article{osti_20706459,
title = {Terahertz radiation from heavy-ion-irradiated In{sub 0.53}Ga{sub 0.47}As photoconductive antenna excited at 1.55 {mu}m},
author = {Chimot, N. and Mangeney, J. and Joulaud, L. and Crozat, P. and Bernas, H. and Blary, K. and Lampin, J. F. and Centre de Spectrometrie Nucleaire et de Spectrometrie de Masse, UMR CNRS 8609, Universite Paris XI, 91405 Orsay cedex and Institut d'Electronique de Microelectronique et de Nanotechnologie, UMR CNRS 8520, Cite Scientifique, 59652 Villeneuve d'Ascq cedex},
abstractNote = {We investigate terahertz (THz) emission from heavy-ion-irradiated In{sub 0.53}Ga{sub 0.47}As photoconductive antennas excited at 1550 nm. The carrier lifetime in the highly irradiated In{sub 0.53}Ga{sub 0.47}As layer is less than 200 fs, the steady-state mobility is 490 cm{sup 2} V{sup -1} s{sup -1}, and the dark resistivity is 3 {omega} cm. The spectrum of the electric field radiating from the Br{sup +}-irradiated In{sub 0.53}Ga{sub 0.47}As antenna extends beyond 2 THz. The THz electric field magnitude is shown to saturate at high optical pump fluence, and the saturation fluence level increases with the irradiation dose, indicating that defect center scattering has a significant contribution to the transient mobility.},
doi = {10.1063/1.2126110},
journal = {Applied Physics Letters},
number = 19,
volume = 87,
place = {United States},
year = {Mon Nov 07 00:00:00 EST 2005},
month = {Mon Nov 07 00:00:00 EST 2005}
}
  • We report the generation of continuous terahertz waves from microwave frequencies of up to 2 THz obtained by photomixing two optical waves at 1.55 {mu}m wavelengths in ion-irradiated In{sub 0.53}Ga{sub 0.47}As interdigitated photomixers. A 200 nm thick silicon nitride coating is used for antireflection and passivation layer, improving the reliability and the heat tolerance of the photomixer. In such devices, output powers greater than 40 nW at 0.5 THz and 10 nW at 1 THz have been achieved. Considering the observed saturation of the output power with the increase of bias voltage, the optimum excitation conditions regarding optical power andmore » bias voltage are discussed.« less
  • We report continuous wave generation at frequencies up to 2 THz using ion-irradiated In{sub 0.53}Ga{sub 0.47}As photomixers coupled to transverse-electromagnetic-horn antennae driven at {approx}1.55 {mu}m wavelength. Output powers up to 0.1 {mu}W at 700 GHz have been achieved. The dependence of the output power on incident optical power and the bias voltage is analyzed in the both regimes of Ohmic transport and recombination-limited transport. The fundamental limitations of the performance of the photomixer devices based on photoconductive phenomenon in recombination-limited transport are analyzed.
  • The effect of negative resistivity observed at anomalously low voltages in output characteristics of modulation-doped In{sub 0.53}Ga{sub 0.47}As/In{sub 0.52}Al{sub 0.48}As field-effect transistors is considered. In the discussed experiments, the threshold for appearance of negative resistivity depends not only on the gate length, which was mentioned before, but also on the gate-drain voltage. It is shown that the negative differential resistivity observed at output characteristics of the short-channel In{sub 0.53}Ga{sub 0.47}As/In{sub 0.52}Al{sub 0.48}As field-effect transistor at anomalously low threshold voltages is related to the formation of the second transport channel as a result of resonance transition of hot electrons from uppermore » levels of the quantum well to the above-barrier layer via the states of ionized donor impurity. The results of the analysis of the low-frequency experiment are used to interpret splitting of the line of emission of the short-channel transistor in the region of terahertz frequency.« less
  • Recently, detailed characterisation of materials and evaluation of devices based on low temperature (LT) grown InGaAs-InAlAs and GaAs-based terahertz (THZ) photoconductors using the Molecular Beam Epitaxy (MBE) technique have been reported by our group. In this work, the characterisation is extended in order to study the growth reproducibility of the photoconductors and the temperature dependence of their transport properties. We show that the structural, optical and transport characteristics of a photoconductor can be optimised by growing the same structure under the same growing conditions but in different MBE systems. The Hall Effect measurements over the temperature range of 100 K–400more » K revealed temperature independency of the mobility within a wide range, in which the concentration is changing with the temperature. The majority of carriers are found to be electrons even in the case of Be doped samples, which is attributed to the large density of excess As anti-site atoms. The transport properties of low temperature grown materials are presented for the first time and the behaviour is found to be different to those of conventional materials, which are grown under normal growth conditions.« less
  • The growth of a passivating layer on a In{sub 0.53}Ga{sub 0.47}As(001)-4 × 2 surface by atomic-layer deposition of tetrakis[ethylmethylamino]Hafnium (TEMAHf)) followed by the water pulse was investigated by synchrotron radiation photoemission. The Hf atoms maintain four-fold coordination, both after the initial TEMAHf deposition and the subsequent water pulse. The Hf atoms initially bond to the As dangling bonds of the surface As atom located on the edges of the raised ridges. One EMA ligand is removed in this process. Subsequent water exposure substitutes OH ligand for one or more remaining EMA ligands. These in turn react with TEMAHf to form Hf-O-Hf bondsmore » allowing the hafnium oxides to grow. The surface In atoms on the terrace of the raised ridges were partially removed, but none bonded of the precursor atoms. Correlations between the interfacial electronic structure and the electric performance are discussed.« less