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Title: Terahertz radiation from heavy-ion-irradiated In{sub 0.53}Ga{sub 0.47}As photoconductive antenna excited at 1.55 {mu}m

Abstract

We investigate terahertz (THz) emission from heavy-ion-irradiated In{sub 0.53}Ga{sub 0.47}As photoconductive antennas excited at 1550 nm. The carrier lifetime in the highly irradiated In{sub 0.53}Ga{sub 0.47}As layer is less than 200 fs, the steady-state mobility is 490 cm{sup 2} V{sup -1} s{sup -1}, and the dark resistivity is 3 {omega} cm. The spectrum of the electric field radiating from the Br{sup +}-irradiated In{sub 0.53}Ga{sub 0.47}As antenna extends beyond 2 THz. The THz electric field magnitude is shown to saturate at high optical pump fluence, and the saturation fluence level increases with the irradiation dose, indicating that defect center scattering has a significant contribution to the transient mobility.

Authors:
; ; ; ; ; ;  [1];  [2];  [2]
  1. Institut d'Electronique Fondamentale, UMR CNRS 8622, Universite Paris XI, 91405 Orsay cedex (France)
  2. (France)
Publication Date:
OSTI Identifier:
20706459
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 87; Journal Issue: 19; Other Information: DOI: 10.1063/1.2126110; (c) 2005 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ANTENNAS; CARRIER LIFETIME; CARRIER MOBILITY; ELECTRIC FIELDS; GALLIUM ARSENIDES; HEAVY IONS; INDIUM ARSENIDES; ION BEAMS; IRRADIATION; OPTICAL PUMPING; RADIATION DOSES; SCATTERING; STEADY-STATE CONDITIONS; THZ RANGE

Citation Formats

Chimot, N., Mangeney, J., Joulaud, L., Crozat, P., Bernas, H., Blary, K., Lampin, J. F., Centre de Spectrometrie Nucleaire et de Spectrometrie de Masse, UMR CNRS 8609, Universite Paris XI, 91405 Orsay cedex, and Institut d'Electronique de Microelectronique et de Nanotechnologie, UMR CNRS 8520, Cite Scientifique, 59652 Villeneuve d'Ascq cedex. Terahertz radiation from heavy-ion-irradiated In{sub 0.53}Ga{sub 0.47}As photoconductive antenna excited at 1.55 {mu}m. United States: N. p., 2005. Web. doi:10.1063/1.2126110.
Chimot, N., Mangeney, J., Joulaud, L., Crozat, P., Bernas, H., Blary, K., Lampin, J. F., Centre de Spectrometrie Nucleaire et de Spectrometrie de Masse, UMR CNRS 8609, Universite Paris XI, 91405 Orsay cedex, & Institut d'Electronique de Microelectronique et de Nanotechnologie, UMR CNRS 8520, Cite Scientifique, 59652 Villeneuve d'Ascq cedex. Terahertz radiation from heavy-ion-irradiated In{sub 0.53}Ga{sub 0.47}As photoconductive antenna excited at 1.55 {mu}m. United States. doi:10.1063/1.2126110.
Chimot, N., Mangeney, J., Joulaud, L., Crozat, P., Bernas, H., Blary, K., Lampin, J. F., Centre de Spectrometrie Nucleaire et de Spectrometrie de Masse, UMR CNRS 8609, Universite Paris XI, 91405 Orsay cedex, and Institut d'Electronique de Microelectronique et de Nanotechnologie, UMR CNRS 8520, Cite Scientifique, 59652 Villeneuve d'Ascq cedex. Mon . "Terahertz radiation from heavy-ion-irradiated In{sub 0.53}Ga{sub 0.47}As photoconductive antenna excited at 1.55 {mu}m". United States. doi:10.1063/1.2126110.
@article{osti_20706459,
title = {Terahertz radiation from heavy-ion-irradiated In{sub 0.53}Ga{sub 0.47}As photoconductive antenna excited at 1.55 {mu}m},
author = {Chimot, N. and Mangeney, J. and Joulaud, L. and Crozat, P. and Bernas, H. and Blary, K. and Lampin, J. F. and Centre de Spectrometrie Nucleaire et de Spectrometrie de Masse, UMR CNRS 8609, Universite Paris XI, 91405 Orsay cedex and Institut d'Electronique de Microelectronique et de Nanotechnologie, UMR CNRS 8520, Cite Scientifique, 59652 Villeneuve d'Ascq cedex},
abstractNote = {We investigate terahertz (THz) emission from heavy-ion-irradiated In{sub 0.53}Ga{sub 0.47}As photoconductive antennas excited at 1550 nm. The carrier lifetime in the highly irradiated In{sub 0.53}Ga{sub 0.47}As layer is less than 200 fs, the steady-state mobility is 490 cm{sup 2} V{sup -1} s{sup -1}, and the dark resistivity is 3 {omega} cm. The spectrum of the electric field radiating from the Br{sup +}-irradiated In{sub 0.53}Ga{sub 0.47}As antenna extends beyond 2 THz. The THz electric field magnitude is shown to saturate at high optical pump fluence, and the saturation fluence level increases with the irradiation dose, indicating that defect center scattering has a significant contribution to the transient mobility.},
doi = {10.1063/1.2126110},
journal = {Applied Physics Letters},
number = 19,
volume = 87,
place = {United States},
year = {Mon Nov 07 00:00:00 EST 2005},
month = {Mon Nov 07 00:00:00 EST 2005}
}