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Title: The effect of excimer laser pretreatment on diffusion and activation of boron implanted in silicon

Abstract

We have investigated the effect of excimer laser annealing (ELA) on transient enhanced diffusion (TED) and activation of boron implanted in Si during subsequent rapid thermal annealing (RTA). It is observed that ELA with partial melting of the implanted region causes reduction of TED in the region that remains solid during ELA, where the diffusion length of boron is reduced by a factor of {approx}4 as compared to the as-implanted sample. This is attributed to several mechanisms such as liquid-state annealing of a fraction of the implantation induced defects, introduction of excess vacancies during ELA, and solid-state annealing of the defects beyond the maximum melting depth by the heat wave propagating into the Si wafer. The ELA pretreatment provides a substantially improved electrical activation of boron during subsequent RTA.

Authors:
; ; ; ; ; ; ; ;  [1];  [2];  [3];  [3]
  1. Department of Physics, Physical Electronics, University of Oslo, P.O. Box 1048 Blindern, N-0316 Oslo (Norway)
  2. (Sweden)
  3. (Italy)
Publication Date:
OSTI Identifier:
20706455
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 87; Journal Issue: 19; Other Information: DOI: 10.1063/1.2126144; (c) 2005 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ANNEALING; BORON; CRYSTALS; DIFFUSION; DIFFUSION LENGTH; EXCIMER LASERS; ION IMPLANTATION; MELTING; SEMICONDUCTOR MATERIALS; SILICON; VACANCIES

Citation Formats

Monakhov, E.V., Svensson, B.G., Linnarsson, M.K., La Magna, A., Italia, M., Privitera, V., Fortunato, G., Cuscuna, M., Mariucci, L., Royal Institute of Technology, Lab of Materials and Semiconductor Physics, P.O. Box Electrum 229, SE-164 40 Kista, CNR-IMM Sezione Catania, Stradale Primosole 50, 95121 Catania, and IFN-CNR, Via Cineto Romano 42, 00156 Rome. The effect of excimer laser pretreatment on diffusion and activation of boron implanted in silicon. United States: N. p., 2005. Web. doi:10.1063/1.2126144.
Monakhov, E.V., Svensson, B.G., Linnarsson, M.K., La Magna, A., Italia, M., Privitera, V., Fortunato, G., Cuscuna, M., Mariucci, L., Royal Institute of Technology, Lab of Materials and Semiconductor Physics, P.O. Box Electrum 229, SE-164 40 Kista, CNR-IMM Sezione Catania, Stradale Primosole 50, 95121 Catania, & IFN-CNR, Via Cineto Romano 42, 00156 Rome. The effect of excimer laser pretreatment on diffusion and activation of boron implanted in silicon. United States. doi:10.1063/1.2126144.
Monakhov, E.V., Svensson, B.G., Linnarsson, M.K., La Magna, A., Italia, M., Privitera, V., Fortunato, G., Cuscuna, M., Mariucci, L., Royal Institute of Technology, Lab of Materials and Semiconductor Physics, P.O. Box Electrum 229, SE-164 40 Kista, CNR-IMM Sezione Catania, Stradale Primosole 50, 95121 Catania, and IFN-CNR, Via Cineto Romano 42, 00156 Rome. Mon . "The effect of excimer laser pretreatment on diffusion and activation of boron implanted in silicon". United States. doi:10.1063/1.2126144.
@article{osti_20706455,
title = {The effect of excimer laser pretreatment on diffusion and activation of boron implanted in silicon},
author = {Monakhov, E.V. and Svensson, B.G. and Linnarsson, M.K. and La Magna, A. and Italia, M. and Privitera, V. and Fortunato, G. and Cuscuna, M. and Mariucci, L. and Royal Institute of Technology, Lab of Materials and Semiconductor Physics, P.O. Box Electrum 229, SE-164 40 Kista and CNR-IMM Sezione Catania, Stradale Primosole 50, 95121 Catania and IFN-CNR, Via Cineto Romano 42, 00156 Rome},
abstractNote = {We have investigated the effect of excimer laser annealing (ELA) on transient enhanced diffusion (TED) and activation of boron implanted in Si during subsequent rapid thermal annealing (RTA). It is observed that ELA with partial melting of the implanted region causes reduction of TED in the region that remains solid during ELA, where the diffusion length of boron is reduced by a factor of {approx}4 as compared to the as-implanted sample. This is attributed to several mechanisms such as liquid-state annealing of a fraction of the implantation induced defects, introduction of excess vacancies during ELA, and solid-state annealing of the defects beyond the maximum melting depth by the heat wave propagating into the Si wafer. The ELA pretreatment provides a substantially improved electrical activation of boron during subsequent RTA.},
doi = {10.1063/1.2126144},
journal = {Applied Physics Letters},
number = 19,
volume = 87,
place = {United States},
year = {Mon Nov 07 00:00:00 EST 2005},
month = {Mon Nov 07 00:00:00 EST 2005}
}