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Title: p type doping of zinc oxide by arsenic ion implantation

Abstract

p type doping of polycrystalline ZnO thin films, by implantation of arsenic ions, is demonstrated. The approach consisted of carrying out the implantations at liquid-nitrogen temperature ({approx}-196 deg. C), followed by a rapid in situ heating of the sample, at 560 deg. C for 10 min, and ex situ annealing at 900 deg. C for 45 min in flowing oxygen. p type conductivity with a hole concentration of 2.5x10{sup 13} cm{sup -2} was obtained using this approach, following implantation of 150 keV 5x10{sup 14} As/cm{sup 2}. A conventional room-temperature implantation of 1x10{sup 15} As/cm{sup 2}, followed by the same ex situ annealing, resulted in n type conductivity with a carrier concentration of 1.7x10{sup 12} cm{sup -2}.

Authors:
; ; ; ; ;  [1];  [2];  [3]
  1. Department of Physics, University of Central Florida, Orlando, Florida 32816 (United States)
  2. (United States)
  3. (Israel)
Publication Date:
OSTI Identifier:
20706453
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 87; Journal Issue: 19; Other Information: DOI: 10.1063/1.2128064; (c) 2005 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ANNEALING; ARSENIC IONS; ELECTRIC CONDUCTIVITY; ELECTRON DENSITY; HEATING; HOLES; ION IMPLANTATION; KEV RANGE 100-1000; OXYGEN; POLYCRYSTALS; SEMICONDUCTOR MATERIALS; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE 0273-0400 K; TEMPERATURE RANGE 0400-1000 K; THIN FILMS; ZINC OXIDES

Citation Formats

Braunstein, G., Muraviev, A., Saxena, H., Dhere, N., Richter, V., Kalish, R., Florida Solar Energy Center, University of Central Florida, Cocoa, Florida 32922, and Solid State Institute and Department of Physics, Technion, Haifa 32000. p type doping of zinc oxide by arsenic ion implantation. United States: N. p., 2005. Web. doi:10.1063/1.2128064.
Braunstein, G., Muraviev, A., Saxena, H., Dhere, N., Richter, V., Kalish, R., Florida Solar Energy Center, University of Central Florida, Cocoa, Florida 32922, & Solid State Institute and Department of Physics, Technion, Haifa 32000. p type doping of zinc oxide by arsenic ion implantation. United States. doi:10.1063/1.2128064.
Braunstein, G., Muraviev, A., Saxena, H., Dhere, N., Richter, V., Kalish, R., Florida Solar Energy Center, University of Central Florida, Cocoa, Florida 32922, and Solid State Institute and Department of Physics, Technion, Haifa 32000. Mon . "p type doping of zinc oxide by arsenic ion implantation". United States. doi:10.1063/1.2128064.
@article{osti_20706453,
title = {p type doping of zinc oxide by arsenic ion implantation},
author = {Braunstein, G. and Muraviev, A. and Saxena, H. and Dhere, N. and Richter, V. and Kalish, R. and Florida Solar Energy Center, University of Central Florida, Cocoa, Florida 32922 and Solid State Institute and Department of Physics, Technion, Haifa 32000},
abstractNote = {p type doping of polycrystalline ZnO thin films, by implantation of arsenic ions, is demonstrated. The approach consisted of carrying out the implantations at liquid-nitrogen temperature ({approx}-196 deg. C), followed by a rapid in situ heating of the sample, at 560 deg. C for 10 min, and ex situ annealing at 900 deg. C for 45 min in flowing oxygen. p type conductivity with a hole concentration of 2.5x10{sup 13} cm{sup -2} was obtained using this approach, following implantation of 150 keV 5x10{sup 14} As/cm{sup 2}. A conventional room-temperature implantation of 1x10{sup 15} As/cm{sup 2}, followed by the same ex situ annealing, resulted in n type conductivity with a carrier concentration of 1.7x10{sup 12} cm{sup -2}.},
doi = {10.1063/1.2128064},
journal = {Applied Physics Letters},
number = 19,
volume = 87,
place = {United States},
year = {Mon Nov 07 00:00:00 EST 2005},
month = {Mon Nov 07 00:00:00 EST 2005}
}