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Title: Amorphization/templated recrystallization method for changing the orientation of single-crystal silicon: An alternative approach to hybrid orientation substrates

Abstract

We demonstrate that the crystal orientation of single-crystal silicon layers may be changed in selected areas from one orientation to another by an amorphization/templated recrystallization (ATR) process, and then introduce ATR as an alternative approach for fabricating planar hybrid orientation substrates with surface regions of (100)- and (110)-oriented Si. The ATR technique, applied to a starting substrate comprising a thin (50-200 nm) overlayer of (100) or (110) Si on a (110) or (100) Si handle wafer, consists of two process steps: (i) Si{sup +} or Ge{sup +} ion implantation to create an amorphous silicon (a-Si) layer extending from the top of the overlayer to a depth below the overlayer/handle wafer interface, and (ii) a thermal anneal to produce the handle-wafer-templated epitaxial recrystallization of the a-Si layer. Regions exposed to the ATR process assume the orientation of the handle wafer while regions not exposed to the ATR process retain their original orientation. The practicality of this approach is demonstrated with the fabrication of a planar hybrid orientation substrate comprising (100) and (110) Si regions separated by SiO{sub 2}-filled trenches.

Authors:
; ; ; ; ; ; ;  [1];  [2]
  1. IBM Semiconductor Research and Development Center, Research Division, T.J. Watson Research Center, Yorktown Heights, New York 10598 (United States)
  2. (United States)
Publication Date:
OSTI Identifier:
20706444
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 87; Journal Issue: 22; Other Information: DOI: 10.1063/1.2138795; (c) 2005 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; AMORPHOUS STATE; ANNEALING; CRYSTAL GROWTH; EPITAXY; GERMANIUM IONS; GRAIN ORIENTATION; INTERFACES; ION IMPLANTATION; LAYERS; MONOCRYSTALS; RECRYSTALLIZATION; SEMICONDUCTOR MATERIALS; SILICON; SILICON IONS; SILICON OXIDES; SUBSTRATES; SURFACES

Citation Formats

Saenger, K.L., Souza, J.P. de, Fogel, K.E., Ott, J.A., Reznicek, A., Sung, C.Y., Sadana, D.K., Yin, H., and IBM Semiconductor Research and Development Center, Microelectronic Division, Hopewell Junction, New York 12533. Amorphization/templated recrystallization method for changing the orientation of single-crystal silicon: An alternative approach to hybrid orientation substrates. United States: N. p., 2005. Web. doi:10.1063/1.2138795.
Saenger, K.L., Souza, J.P. de, Fogel, K.E., Ott, J.A., Reznicek, A., Sung, C.Y., Sadana, D.K., Yin, H., & IBM Semiconductor Research and Development Center, Microelectronic Division, Hopewell Junction, New York 12533. Amorphization/templated recrystallization method for changing the orientation of single-crystal silicon: An alternative approach to hybrid orientation substrates. United States. doi:10.1063/1.2138795.
Saenger, K.L., Souza, J.P. de, Fogel, K.E., Ott, J.A., Reznicek, A., Sung, C.Y., Sadana, D.K., Yin, H., and IBM Semiconductor Research and Development Center, Microelectronic Division, Hopewell Junction, New York 12533. Mon . "Amorphization/templated recrystallization method for changing the orientation of single-crystal silicon: An alternative approach to hybrid orientation substrates". United States. doi:10.1063/1.2138795.
@article{osti_20706444,
title = {Amorphization/templated recrystallization method for changing the orientation of single-crystal silicon: An alternative approach to hybrid orientation substrates},
author = {Saenger, K.L. and Souza, J.P. de and Fogel, K.E. and Ott, J.A. and Reznicek, A. and Sung, C.Y. and Sadana, D.K. and Yin, H. and IBM Semiconductor Research and Development Center, Microelectronic Division, Hopewell Junction, New York 12533},
abstractNote = {We demonstrate that the crystal orientation of single-crystal silicon layers may be changed in selected areas from one orientation to another by an amorphization/templated recrystallization (ATR) process, and then introduce ATR as an alternative approach for fabricating planar hybrid orientation substrates with surface regions of (100)- and (110)-oriented Si. The ATR technique, applied to a starting substrate comprising a thin (50-200 nm) overlayer of (100) or (110) Si on a (110) or (100) Si handle wafer, consists of two process steps: (i) Si{sup +} or Ge{sup +} ion implantation to create an amorphous silicon (a-Si) layer extending from the top of the overlayer to a depth below the overlayer/handle wafer interface, and (ii) a thermal anneal to produce the handle-wafer-templated epitaxial recrystallization of the a-Si layer. Regions exposed to the ATR process assume the orientation of the handle wafer while regions not exposed to the ATR process retain their original orientation. The practicality of this approach is demonstrated with the fabrication of a planar hybrid orientation substrate comprising (100) and (110) Si regions separated by SiO{sub 2}-filled trenches.},
doi = {10.1063/1.2138795},
journal = {Applied Physics Letters},
number = 22,
volume = 87,
place = {United States},
year = {Mon Nov 28 00:00:00 EST 2005},
month = {Mon Nov 28 00:00:00 EST 2005}
}