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Title: Amorphization/templated recrystallization method for changing the orientation of single-crystal silicon: An alternative approach to hybrid orientation substrates

Abstract

We demonstrate that the crystal orientation of single-crystal silicon layers may be changed in selected areas from one orientation to another by an amorphization/templated recrystallization (ATR) process, and then introduce ATR as an alternative approach for fabricating planar hybrid orientation substrates with surface regions of (100)- and (110)-oriented Si. The ATR technique, applied to a starting substrate comprising a thin (50-200 nm) overlayer of (100) or (110) Si on a (110) or (100) Si handle wafer, consists of two process steps: (i) Si{sup +} or Ge{sup +} ion implantation to create an amorphous silicon (a-Si) layer extending from the top of the overlayer to a depth below the overlayer/handle wafer interface, and (ii) a thermal anneal to produce the handle-wafer-templated epitaxial recrystallization of the a-Si layer. Regions exposed to the ATR process assume the orientation of the handle wafer while regions not exposed to the ATR process retain their original orientation. The practicality of this approach is demonstrated with the fabrication of a planar hybrid orientation substrate comprising (100) and (110) Si regions separated by SiO{sub 2}-filled trenches.

Authors:
; ; ; ; ; ; ;  [1];  [2]
  1. IBM Semiconductor Research and Development Center, Research Division, T.J. Watson Research Center, Yorktown Heights, New York 10598 (United States)
  2. (United States)
Publication Date:
OSTI Identifier:
20706444
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 87; Journal Issue: 22; Other Information: DOI: 10.1063/1.2138795; (c) 2005 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; AMORPHOUS STATE; ANNEALING; CRYSTAL GROWTH; EPITAXY; GERMANIUM IONS; GRAIN ORIENTATION; INTERFACES; ION IMPLANTATION; LAYERS; MONOCRYSTALS; RECRYSTALLIZATION; SEMICONDUCTOR MATERIALS; SILICON; SILICON IONS; SILICON OXIDES; SUBSTRATES; SURFACES

Citation Formats

Saenger, K.L., Souza, J.P. de, Fogel, K.E., Ott, J.A., Reznicek, A., Sung, C.Y., Sadana, D.K., Yin, H., and IBM Semiconductor Research and Development Center, Microelectronic Division, Hopewell Junction, New York 12533. Amorphization/templated recrystallization method for changing the orientation of single-crystal silicon: An alternative approach to hybrid orientation substrates. United States: N. p., 2005. Web. doi:10.1063/1.2138795.
Saenger, K.L., Souza, J.P. de, Fogel, K.E., Ott, J.A., Reznicek, A., Sung, C.Y., Sadana, D.K., Yin, H., & IBM Semiconductor Research and Development Center, Microelectronic Division, Hopewell Junction, New York 12533. Amorphization/templated recrystallization method for changing the orientation of single-crystal silicon: An alternative approach to hybrid orientation substrates. United States. doi:10.1063/1.2138795.
Saenger, K.L., Souza, J.P. de, Fogel, K.E., Ott, J.A., Reznicek, A., Sung, C.Y., Sadana, D.K., Yin, H., and IBM Semiconductor Research and Development Center, Microelectronic Division, Hopewell Junction, New York 12533. Mon . "Amorphization/templated recrystallization method for changing the orientation of single-crystal silicon: An alternative approach to hybrid orientation substrates". United States. doi:10.1063/1.2138795.
@article{osti_20706444,
title = {Amorphization/templated recrystallization method for changing the orientation of single-crystal silicon: An alternative approach to hybrid orientation substrates},
author = {Saenger, K.L. and Souza, J.P. de and Fogel, K.E. and Ott, J.A. and Reznicek, A. and Sung, C.Y. and Sadana, D.K. and Yin, H. and IBM Semiconductor Research and Development Center, Microelectronic Division, Hopewell Junction, New York 12533},
abstractNote = {We demonstrate that the crystal orientation of single-crystal silicon layers may be changed in selected areas from one orientation to another by an amorphization/templated recrystallization (ATR) process, and then introduce ATR as an alternative approach for fabricating planar hybrid orientation substrates with surface regions of (100)- and (110)-oriented Si. The ATR technique, applied to a starting substrate comprising a thin (50-200 nm) overlayer of (100) or (110) Si on a (110) or (100) Si handle wafer, consists of two process steps: (i) Si{sup +} or Ge{sup +} ion implantation to create an amorphous silicon (a-Si) layer extending from the top of the overlayer to a depth below the overlayer/handle wafer interface, and (ii) a thermal anneal to produce the handle-wafer-templated epitaxial recrystallization of the a-Si layer. Regions exposed to the ATR process assume the orientation of the handle wafer while regions not exposed to the ATR process retain their original orientation. The practicality of this approach is demonstrated with the fabrication of a planar hybrid orientation substrate comprising (100) and (110) Si regions separated by SiO{sub 2}-filled trenches.},
doi = {10.1063/1.2138795},
journal = {Applied Physics Letters},
number = 22,
volume = 87,
place = {United States},
year = {Mon Nov 28 00:00:00 EST 2005},
month = {Mon Nov 28 00:00:00 EST 2005}
}
  • The mechanisms of amorphization for crystalline Si (c-Si) induced by ultraviolet femtosecond laser irradiation are described in this paper. The wavelength of the laser pulse was 267 nm, which is the third harmonics of a Ti:sapphire laser. We performed a laser scanning microscopy and a transmission electron microscopy for surface and structural analysis and imaging pump-probe measurements to investigate the dynamics of the process. From the analyses, we confirmed that the thickness of the amorphized layer was quite uniform and there is no lattice defect under the amorphized section. The thickness of the amorphous Si (a-Si) layer was 7 nmmore » and the threshold fluence of the amorphization was 44 mJ/cm{sup 2}. From the Imaging Pump-Probe measurement it was revealed that the melting time is less than 1 ns and ultra high speed melting and re-solidification process was occurred. The melting depth estimated by the Imaging Pump-Probe measurement was 7 nm. The melted portion completely corresponded to the amorphized section.« less
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  • Single-crystal-like rare earth oxide thin films on silicon (Si) substrates were fabricated by magnetron sputtering and high-temperature annealing processes. A 30-nm-thick high-quality GdNdO{sub x} (GNO) film was deposited using a high-temperature sputtering process at 500°C. A Gd{sub 2}O{sub 3} and Nd{sub 2}O{sub 3} mixture was used as the sputtering target, in which the proportions of Gd{sub 2}O{sub 3} and Nd{sub 2}O{sub 3} were controlled to make the GNO’s lattice parameter match that of the Si substrate. To further improve the quality of the GNO film, a post-deposition annealing process was performed at a temperature of 1000°C. The GNO films exhibitedmore » a strong preferred orientation on the Si substrate. In addition, an Al/GNO/Si capacitor was fabricated to evaluate the dielectric constant and leakage current of the GNO films. It was determined that the single-crystal-like GNO films on the Si substrates have potential for use as an insulator layer for semiconductor-on-insulator and semiconductor/insulator multilayer applications.« less