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Title: HfO{sub 2} high-k dielectrics grown on (100)Ge with ultrathin passivation layers: Structure and interfacial stability

Abstract

We have investigated the growth of HfO{sub 2} thin films on (100)Ge by molecular beam epitaxy. By means of transmission electron microscopy, the structural characteristics of the films grown on clean Ge surfaces are compared with those grown on passivation layers of GeO{sub x} and GeO{sub x}N{sub y}. The interface was found to be very flat and thin, with an interfacial layer one or two monolayer thick. However, traces of Ge in the oxide have been detected when deposited on either one of the interfacial layers, which can be explained by the instability of the interfacial layers grown with an atomic oxygen/nitrogen beam, prior to the HfO{sub 2} deposition.

Authors:
; ; ; ;  [1];  [2];  [2];  [3]
  1. Institute of Physics of Complex Matter, Ecole Polytechnique Federal de Lausanne, CH-1015 Lausanne, Switzerland and Advanced Materials and Metrology, MosBeam Foundation, PSE, CH-1015 Lausanne (Switzerland)
  2. (Switzerland)
  3. (Greece)
Publication Date:
OSTI Identifier:
20706442
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 87; Journal Issue: 22; Other Information: DOI: 10.1063/1.2137897; (c) 2005 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CRYSTAL GROWTH; DEPOSITION; DIELECTRIC MATERIALS; GERMANIUM; HAFNIUM OXIDES; INSTABILITY; INTERFACES; LAYERS; MOLECULAR BEAM EPITAXY; NITROGEN; OXYGEN; PASSIVATION; SEMICONDUCTOR MATERIALS; STABILITY; SURFACES; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY

Citation Formats

Seo, J.W., Dieker, Ch., Locquet, J.-P., Mavrou, G., Dimoulas, A., Institute of Physics of Complex Matter, Ecole Polytechnique Federal de Lausanne, CH-1015 Lausanne, IBM Research GmbH, Zurich Research Laboratory, CH-8803 Rueschlikon, and MBE Laboratory, Institute of Materials Science, NCSR DEMOKRITOS, 153 10, Athens. HfO{sub 2} high-k dielectrics grown on (100)Ge with ultrathin passivation layers: Structure and interfacial stability. United States: N. p., 2005. Web. doi:10.1063/1.2137897.
Seo, J.W., Dieker, Ch., Locquet, J.-P., Mavrou, G., Dimoulas, A., Institute of Physics of Complex Matter, Ecole Polytechnique Federal de Lausanne, CH-1015 Lausanne, IBM Research GmbH, Zurich Research Laboratory, CH-8803 Rueschlikon, & MBE Laboratory, Institute of Materials Science, NCSR DEMOKRITOS, 153 10, Athens. HfO{sub 2} high-k dielectrics grown on (100)Ge with ultrathin passivation layers: Structure and interfacial stability. United States. doi:10.1063/1.2137897.
Seo, J.W., Dieker, Ch., Locquet, J.-P., Mavrou, G., Dimoulas, A., Institute of Physics of Complex Matter, Ecole Polytechnique Federal de Lausanne, CH-1015 Lausanne, IBM Research GmbH, Zurich Research Laboratory, CH-8803 Rueschlikon, and MBE Laboratory, Institute of Materials Science, NCSR DEMOKRITOS, 153 10, Athens. Mon . "HfO{sub 2} high-k dielectrics grown on (100)Ge with ultrathin passivation layers: Structure and interfacial stability". United States. doi:10.1063/1.2137897.
@article{osti_20706442,
title = {HfO{sub 2} high-k dielectrics grown on (100)Ge with ultrathin passivation layers: Structure and interfacial stability},
author = {Seo, J.W. and Dieker, Ch. and Locquet, J.-P. and Mavrou, G. and Dimoulas, A. and Institute of Physics of Complex Matter, Ecole Polytechnique Federal de Lausanne, CH-1015 Lausanne and IBM Research GmbH, Zurich Research Laboratory, CH-8803 Rueschlikon and MBE Laboratory, Institute of Materials Science, NCSR DEMOKRITOS, 153 10, Athens},
abstractNote = {We have investigated the growth of HfO{sub 2} thin films on (100)Ge by molecular beam epitaxy. By means of transmission electron microscopy, the structural characteristics of the films grown on clean Ge surfaces are compared with those grown on passivation layers of GeO{sub x} and GeO{sub x}N{sub y}. The interface was found to be very flat and thin, with an interfacial layer one or two monolayer thick. However, traces of Ge in the oxide have been detected when deposited on either one of the interfacial layers, which can be explained by the instability of the interfacial layers grown with an atomic oxygen/nitrogen beam, prior to the HfO{sub 2} deposition.},
doi = {10.1063/1.2137897},
journal = {Applied Physics Letters},
number = 22,
volume = 87,
place = {United States},
year = {Mon Nov 28 00:00:00 EST 2005},
month = {Mon Nov 28 00:00:00 EST 2005}
}