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Title: Growth and properties of GaN and AlN layers on silver substrates

Abstract

We report on the preparation and properties of GaN and AlN layers grown by molecular-beam epitaxy on silver metal substrates. X-ray diffraction rocking curves show polycrystalline character of GaN with high preferential GaN(11-22) orientation. An intermetallic phase of Ga{sub 3}Ag is found at the GaN/Ag interface. On the other hand, AlN layers exhibit a monocrystalline structure with a growth direction of (0002). Schottky diodes prepared on GaN layers show good rectifying behavior and relatively low leakage current ({approx}10{sup -3} A/cm{sup 2}). These results indicate that the III-nitride growth on metallic substrates might be used for low-cost and large-area electronic and photonic devices.

Authors:
; ; ; ; ; ; ; ;  [1];  [2];  [3];  [3];  [4];  [3]
  1. Max-Planck-Institute for Radioastronomy, Bonn, D-53121 Bonn (Germany)
  2. (Germany) and Institut fuer Hochfrequenztechnik, Technische Universitaet Braunschweig, Schleinitzstrasse 22, D-38106 Braunschweig (Germany)
  3. (Germany)
  4. (Czech Republic)
Publication Date:
OSTI Identifier:
20706433
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 87; Journal Issue: 21; Other Information: DOI: 10.1063/1.2135879; (c) 2005 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ALUMINIUM NITRIDES; CRYSTAL GROWTH; GALLIUM NITRIDES; INTERFACES; LAYERS; LEAKAGE CURRENT; MOLECULAR BEAM EPITAXY; NEUTRON DIFFRACTION; POLYCRYSTALS; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR MATERIALS; SILVER; SUBSTRATES; X-RAY DIFFRACTION

Citation Formats

Mikulics, Martin, Kocan, Martin, Rizzi, Angela, Javorka, Peter, Sofer, Zdenek, Stejskal, Josef, Marso, Michel, Kordos, Peter, Lueth, Hans, Institute of Thin Films and Interfaces, Research Center Juelich, D-52425 Juelich, IV. Physikalisches Institut, Georg-August Universitaet Goettingen, D-37077 Goettingen, AMD, Wilschdorfer Landstrasse 101, 01109 Dresden, Department of Inorganic Chemistry, Institute of Chemical Technology, Technicka 5, Prague 6, and Institute of Thin Films and Interfaces and CNI-Center of Nanoelectronic Systems for Information Technology, Research Centre Juelich, D-52425 Juelich. Growth and properties of GaN and AlN layers on silver substrates. United States: N. p., 2005. Web. doi:10.1063/1.2135879.
Mikulics, Martin, Kocan, Martin, Rizzi, Angela, Javorka, Peter, Sofer, Zdenek, Stejskal, Josef, Marso, Michel, Kordos, Peter, Lueth, Hans, Institute of Thin Films and Interfaces, Research Center Juelich, D-52425 Juelich, IV. Physikalisches Institut, Georg-August Universitaet Goettingen, D-37077 Goettingen, AMD, Wilschdorfer Landstrasse 101, 01109 Dresden, Department of Inorganic Chemistry, Institute of Chemical Technology, Technicka 5, Prague 6, & Institute of Thin Films and Interfaces and CNI-Center of Nanoelectronic Systems for Information Technology, Research Centre Juelich, D-52425 Juelich. Growth and properties of GaN and AlN layers on silver substrates. United States. doi:10.1063/1.2135879.
Mikulics, Martin, Kocan, Martin, Rizzi, Angela, Javorka, Peter, Sofer, Zdenek, Stejskal, Josef, Marso, Michel, Kordos, Peter, Lueth, Hans, Institute of Thin Films and Interfaces, Research Center Juelich, D-52425 Juelich, IV. Physikalisches Institut, Georg-August Universitaet Goettingen, D-37077 Goettingen, AMD, Wilschdorfer Landstrasse 101, 01109 Dresden, Department of Inorganic Chemistry, Institute of Chemical Technology, Technicka 5, Prague 6, and Institute of Thin Films and Interfaces and CNI-Center of Nanoelectronic Systems for Information Technology, Research Centre Juelich, D-52425 Juelich. Mon . "Growth and properties of GaN and AlN layers on silver substrates". United States. doi:10.1063/1.2135879.
@article{osti_20706433,
title = {Growth and properties of GaN and AlN layers on silver substrates},
author = {Mikulics, Martin and Kocan, Martin and Rizzi, Angela and Javorka, Peter and Sofer, Zdenek and Stejskal, Josef and Marso, Michel and Kordos, Peter and Lueth, Hans and Institute of Thin Films and Interfaces, Research Center Juelich, D-52425 Juelich and IV. Physikalisches Institut, Georg-August Universitaet Goettingen, D-37077 Goettingen and AMD, Wilschdorfer Landstrasse 101, 01109 Dresden and Department of Inorganic Chemistry, Institute of Chemical Technology, Technicka 5, Prague 6 and Institute of Thin Films and Interfaces and CNI-Center of Nanoelectronic Systems for Information Technology, Research Centre Juelich, D-52425 Juelich},
abstractNote = {We report on the preparation and properties of GaN and AlN layers grown by molecular-beam epitaxy on silver metal substrates. X-ray diffraction rocking curves show polycrystalline character of GaN with high preferential GaN(11-22) orientation. An intermetallic phase of Ga{sub 3}Ag is found at the GaN/Ag interface. On the other hand, AlN layers exhibit a monocrystalline structure with a growth direction of (0002). Schottky diodes prepared on GaN layers show good rectifying behavior and relatively low leakage current ({approx}10{sup -3} A/cm{sup 2}). These results indicate that the III-nitride growth on metallic substrates might be used for low-cost and large-area electronic and photonic devices.},
doi = {10.1063/1.2135879},
journal = {Applied Physics Letters},
number = 21,
volume = 87,
place = {United States},
year = {Mon Nov 21 00:00:00 EST 2005},
month = {Mon Nov 21 00:00:00 EST 2005}
}