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Title: Fine structure of AlN/AlGaN superlattice grown by pulsed atomic-layer epitaxy for dislocation filtering

Abstract

We report the detailed structure analysis of our AlN/AlGaN superlattice (SL) grown by pulsed atomic-layer epitaxy (PALE) for dislocation filtering. Due to the nature of PALE, the AlGaN well material itself in the SL was found to be composed actually of an Al{sub x}Ga{sub 1-x}N/Al{sub y}Ga{sub 1-y}N short-period superlattice (SPSL), with the periodicity of 15.5 A ({approx_equal}6 monolayer), determined consistently from high-resolution x-ray diffraction and high-resolution transmission electron microscopy measurements. The SPSL nature of the AlGaN layers is believed to benefit from the AlN/AlGaN SL's coherent growth, which is important in exerting compressive strain for the thick upper n-AlGaN film, which serves to eliminate cracks. Direct evidence is presented which indicates that this SL can dramatically reduce the screw-type threading dislocation density.

Authors:
; ; ; ; ; ;  [1];  [2]
  1. Department of Electrical Engineering, University of South Carolina, Columbia, South Carolina 29208 (United States)
  2. (United States)
Publication Date:
OSTI Identifier:
20706431
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 87; Journal Issue: 21; Other Information: DOI: 10.1063/1.2136424; (c) 2005 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ALUMINIUM NITRIDES; CRACKS; CRYSTAL GROWTH; DISLOCATIONS; EPITAXY; FILMS; FINE STRUCTURE; GALLIUM NITRIDES; LAYERS; PERIODICITY; RESOLUTION; SEMICONDUCTOR MATERIALS; SUPERLATTICES; TRANSMISSION ELECTRON MICROSCOPY; X-RAY DIFFRACTION

Citation Formats

Sun, W.H., Zhang, J.P., Yang, J.W., Maruska, H.P., Khan, M. Asif, Liu, R., Ponce, F.A., and Department of Physics and Astronomy, Arizona State University, Tempe, Arizona 85287. Fine structure of AlN/AlGaN superlattice grown by pulsed atomic-layer epitaxy for dislocation filtering. United States: N. p., 2005. Web. doi:10.1063/1.2136424.
Sun, W.H., Zhang, J.P., Yang, J.W., Maruska, H.P., Khan, M. Asif, Liu, R., Ponce, F.A., & Department of Physics and Astronomy, Arizona State University, Tempe, Arizona 85287. Fine structure of AlN/AlGaN superlattice grown by pulsed atomic-layer epitaxy for dislocation filtering. United States. doi:10.1063/1.2136424.
Sun, W.H., Zhang, J.P., Yang, J.W., Maruska, H.P., Khan, M. Asif, Liu, R., Ponce, F.A., and Department of Physics and Astronomy, Arizona State University, Tempe, Arizona 85287. Mon . "Fine structure of AlN/AlGaN superlattice grown by pulsed atomic-layer epitaxy for dislocation filtering". United States. doi:10.1063/1.2136424.
@article{osti_20706431,
title = {Fine structure of AlN/AlGaN superlattice grown by pulsed atomic-layer epitaxy for dislocation filtering},
author = {Sun, W.H. and Zhang, J.P. and Yang, J.W. and Maruska, H.P. and Khan, M. Asif and Liu, R. and Ponce, F.A. and Department of Physics and Astronomy, Arizona State University, Tempe, Arizona 85287},
abstractNote = {We report the detailed structure analysis of our AlN/AlGaN superlattice (SL) grown by pulsed atomic-layer epitaxy (PALE) for dislocation filtering. Due to the nature of PALE, the AlGaN well material itself in the SL was found to be composed actually of an Al{sub x}Ga{sub 1-x}N/Al{sub y}Ga{sub 1-y}N short-period superlattice (SPSL), with the periodicity of 15.5 A ({approx_equal}6 monolayer), determined consistently from high-resolution x-ray diffraction and high-resolution transmission electron microscopy measurements. The SPSL nature of the AlGaN layers is believed to benefit from the AlN/AlGaN SL's coherent growth, which is important in exerting compressive strain for the thick upper n-AlGaN film, which serves to eliminate cracks. Direct evidence is presented which indicates that this SL can dramatically reduce the screw-type threading dislocation density.},
doi = {10.1063/1.2136424},
journal = {Applied Physics Letters},
number = 21,
volume = 87,
place = {United States},
year = {Mon Nov 21 00:00:00 EST 2005},
month = {Mon Nov 21 00:00:00 EST 2005}
}