skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Mid-infrared InAs/AlGaSb superlattice quantum-cascade lasers

Abstract

We report on the demonstration of mid-infrared InAs/AlGaSb superlattice quantum-cascade lasers operating at 10 {mu}m. The laser structures are grown on n-InAs (100) substrate by solid-source molecular-beam epitaxy. An InAs/AlGaSb chirped superlattice structure providing a large oscillator strength and fast carrier depopulation is employed as the active part. The observed minimum threshold current density at 80 K is 0.7 kA/cm{sup 2}, and the maximum operation temperature in pulse mode is 270 K. The waveguide loss of an InAs plasmon waveguide is estimated, and the factors that determine the operation temperature are discussed.

Authors:
; ;  [1]
  1. Laboratory for Nanoelectronics and Semiconductor Spintronics, Research Institute of Electrical Communication, Tohoku University, Katahira 2-1-1, Aoba-ku, Sendai (Japan)
Publication Date:
OSTI Identifier:
20706426
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 87; Journal Issue: 21; Other Information: DOI: 10.1063/1.2136428; (c) 2005 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ALUMINIUM COMPOUNDS; CRYSTAL GROWTH; CURRENT DENSITY; GALLIUM ANTIMONIDES; INDIUM ARSENIDES; LASERS; MOLECULAR BEAM EPITAXY; OSCILLATOR STRENGTHS; PLASMONS; SEMICONDUCTOR MATERIALS; SUBSTRATES; SUPERLATTICES; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE 0065-0273 K; THRESHOLD CURRENT; WAVEGUIDES

Citation Formats

Ohtani, K., Fujita, K., and Ohno, H. Mid-infrared InAs/AlGaSb superlattice quantum-cascade lasers. United States: N. p., 2005. Web. doi:10.1063/1.2136428.
Ohtani, K., Fujita, K., & Ohno, H. Mid-infrared InAs/AlGaSb superlattice quantum-cascade lasers. United States. doi:10.1063/1.2136428.
Ohtani, K., Fujita, K., and Ohno, H. Mon . "Mid-infrared InAs/AlGaSb superlattice quantum-cascade lasers". United States. doi:10.1063/1.2136428.
@article{osti_20706426,
title = {Mid-infrared InAs/AlGaSb superlattice quantum-cascade lasers},
author = {Ohtani, K. and Fujita, K. and Ohno, H.},
abstractNote = {We report on the demonstration of mid-infrared InAs/AlGaSb superlattice quantum-cascade lasers operating at 10 {mu}m. The laser structures are grown on n-InAs (100) substrate by solid-source molecular-beam epitaxy. An InAs/AlGaSb chirped superlattice structure providing a large oscillator strength and fast carrier depopulation is employed as the active part. The observed minimum threshold current density at 80 K is 0.7 kA/cm{sup 2}, and the maximum operation temperature in pulse mode is 270 K. The waveguide loss of an InAs plasmon waveguide is estimated, and the factors that determine the operation temperature are discussed.},
doi = {10.1063/1.2136428},
journal = {Applied Physics Letters},
number = 21,
volume = 87,
place = {United States},
year = {Mon Nov 21 00:00:00 EST 2005},
month = {Mon Nov 21 00:00:00 EST 2005}
}