Self-consistent calibration of photoluminescence and photoconductance lifetime measurements
- Centre of Excellence for Advanced Silicon Photovoltaics and Photonics, University of New South Wales, Sydney, 2052 (Australia)
An experimental method is introduced by which relative photoluminescence or photoconductance signals can be converted into an absolute excess carrier concentration. This method is demonstrated by comparison of self-consistently calibrated quasi-steady-state photoluminescence measurements with transient photoluminescence and with transient and quasi-steady-state photoconductance measurements on silicon samples. The method simplifies photoluminescence lifetime measurements and the recently introduced Suns-photoluminescence technique as it allows these techniques to be used in a self-contained way, without the previous requirement for a separate experimental technique for calibration. Important experimental observations regarding photoconductance lifetime measurements are also discussed.
- OSTI ID:
- 20706413
- Journal Information:
- Applied Physics Letters, Vol. 87, Issue 18; Other Information: DOI: 10.1063/1.2119411; (c) 2005 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
Similar Records
Quality Characterization of Silicon Bricks using Photoluminescence Imaging and Photoconductive Decay: Preprint
Effect of Nickel Contamination on High Carrier Lifetime n-Type Crystalline Silicon