Mechanisms of arsenic segregation to the Ni{sub 2}Si/SiO{sub 2} interface during Ni{sub 2}Si formation
- IKS, Katholieke Universiteit Leuven, Celestijnenlaan 200 D, 3001 Leuven (Belgium)
We have investigated the mechanisms of As redistribution during Ni{sub 2}Si formation on polycrystalline Si/SiO{sub 2} and amorphous Si/SiO{sub 2} stacks on (100) Si by secondary ion mass spectroscopy measurements. We found a significant impact of the Si crystallinity and pre-silicidation thermal treatments on the dopant redistribution. There is a significantly higher dose of As accumulated in the vicinity of SiO{sub 2} after full Ni{sub 2}Si silicidation on poly-Si ({approx}51%) than on amorphous-Si ({approx}13%). We demonstrate that the As redistribution during Ni{sub 2}Si formation on amorphous silicon is dominated by snowplow of As in front of the growing silicide. In contrast, when Ni{sub 2}Si is formed on recrystallized poly-silicon there are three segregation mechanisms: (1) thermal diffusion during high temperature recrystallization annealing ({approx}17%) (2) snowplow during silicidation ({approx}13%), not dependent on the substrate crystallinity and (3) diffusion along poly-Si grain boundaries during silicidation ({approx}22%)
- OSTI ID:
- 20706407
- Journal Information:
- Applied Physics Letters, Vol. 87, Issue 18; Other Information: DOI: 10.1063/1.2125124; (c) 2005 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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