Vacancy formation in GaAs under different equilibrium conditions

Journal Article · Mon Oct 17 00:00:00 EDT 2005 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.2084330· OSTI ID:20706376

Bondarenko, V; Gebauer, J; Redmann, F; Krause-Rehberg, R ^[1]

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1. Department of Physics, University Halle, 06099 Halle (Germany)

Defect properties of undoped semiinsulating and silicon doped n-type GaAs annealed at different arsenic vapor pressures have been studied by means of positron annihilation and Hall effect measurements. In both types of samples, formation of monovacancylike defects during annealing was observed. The concentration of these defects increases in GaAs:Si and decreases in undoped GaAs when the arsenic pressure increases. In GaAs:Si, the defect was earlier identified as Si{sub Ga}-V{sub Ga} complex, however, in undoped GaAs arsenic vacancies are formed, which are part of defect complex.

• OSTI ID: 20706376
• Journal Information: Applied Physics Letters, Vol. 87, Issue 16; Other Information: DOI: 10.1063/1.2084330; (c) 2005 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ANNEALING
ANNIHILATION
ARSENIC
CRYSTALS
DOPED MATERIALS
GALLIUM ARSENIDES
HALL EFFECT
POSITRONS
SEMICONDUCTOR MATERIALS
SILICON
VACANCIES
VAPOR PRESSURE