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Title: Open circuit voltage improvement of high-deposition-rate microcrystalline silicon solar cells by hot wire interface layers

Abstract

Significant improvement in open circuit voltage and fill factor was achieved for microcrystalline silicon ({mu}c-Si:H) solar cells deposited by plasma-enhanced chemical vapor deposition (PECVD) by the incorporation of an intrinsic {mu}c-Si:H p/i buffer layer fabricated by hot-wire (HW) CVD. The improved p/i interface quality, likely due to the ion-free deposition on the p layers in the HWCVD process, was concluded from a considerably enhanced blue light response in such solar cells. Using this buffer layer concept allows the authors to apply high deposition rate PECVD processes for the {mu}c-Si:H i layer material, yielding a high efficiency of 10.3% for a single junction {mu}c-Si:H solar cell.

Authors:
; ; ; ; ;  [1];  [2];  [3]
  1. IPV, Forschungszentrum Juelich GmbH, D-52425 Juelich (Germany)
  2. (China)
  3. (Germany)
Publication Date:
OSTI Identifier:
20702603
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 87; Journal Issue: 7; Other Information: DOI: 10.1063/1.2011771; (c) 2005 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; BUFFERS; CHEMICAL VAPOR DEPOSITION; ELECTRIC POTENTIAL; FILL FACTORS; INTERFACES; LAYERS; PLASMA; SEMICONDUCTOR MATERIALS; SILICON; SILICON SOLAR CELLS; VISIBLE RADIATION; WIRES

Citation Formats

Mai, Y., Klein, S., Carius, R., Stiebig, H., Geng, X., Finger, F., Institute of Photoelectronics, Nankai University, Tianjin 300071, and IPV, Forschungszentrum Juelich GmbH, D-52425 Juelich. Open circuit voltage improvement of high-deposition-rate microcrystalline silicon solar cells by hot wire interface layers. United States: N. p., 2005. Web. doi:10.1063/1.2011771.
Mai, Y., Klein, S., Carius, R., Stiebig, H., Geng, X., Finger, F., Institute of Photoelectronics, Nankai University, Tianjin 300071, & IPV, Forschungszentrum Juelich GmbH, D-52425 Juelich. Open circuit voltage improvement of high-deposition-rate microcrystalline silicon solar cells by hot wire interface layers. United States. doi:10.1063/1.2011771.
Mai, Y., Klein, S., Carius, R., Stiebig, H., Geng, X., Finger, F., Institute of Photoelectronics, Nankai University, Tianjin 300071, and IPV, Forschungszentrum Juelich GmbH, D-52425 Juelich. Mon . "Open circuit voltage improvement of high-deposition-rate microcrystalline silicon solar cells by hot wire interface layers". United States. doi:10.1063/1.2011771.
@article{osti_20702603,
title = {Open circuit voltage improvement of high-deposition-rate microcrystalline silicon solar cells by hot wire interface layers},
author = {Mai, Y. and Klein, S. and Carius, R. and Stiebig, H. and Geng, X. and Finger, F. and Institute of Photoelectronics, Nankai University, Tianjin 300071 and IPV, Forschungszentrum Juelich GmbH, D-52425 Juelich},
abstractNote = {Significant improvement in open circuit voltage and fill factor was achieved for microcrystalline silicon ({mu}c-Si:H) solar cells deposited by plasma-enhanced chemical vapor deposition (PECVD) by the incorporation of an intrinsic {mu}c-Si:H p/i buffer layer fabricated by hot-wire (HW) CVD. The improved p/i interface quality, likely due to the ion-free deposition on the p layers in the HWCVD process, was concluded from a considerably enhanced blue light response in such solar cells. Using this buffer layer concept allows the authors to apply high deposition rate PECVD processes for the {mu}c-Si:H i layer material, yielding a high efficiency of 10.3% for a single junction {mu}c-Si:H solar cell.},
doi = {10.1063/1.2011771},
journal = {Applied Physics Letters},
issn = {0003-6951},
number = 7,
volume = 87,
place = {United States},
year = {2005},
month = {8}
}