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Title: 200 mm wafer-scale epitaxial transfer of single crystal Si on glass by anodic bonding of silicon-on-insulator wafers

Abstract

We report a low-temperature (350 deg. C) anodic bonding followed by grind/etch-back method for a 200 mm wafer-scale epitaxial transfer of ultrathin (1.9 kA) single crystalline Si on Pyrex glass. Standard back-end-of-line 3 kA SiN/3 kA undoped silicon glass passivating films were used as the buffer layers between the silicon-on-insulator wafer and the glass wafer. The quality and strain-free state of the transferred transparent Si film to glass was characterized by cross-sectional transmission electron microscopy, x-ray diffraction (XRD), and high-resolution XRD. Complete removal of the bulk Si after bonding was ascertained by Auger electron spectroscopy spectra and depth profiling. Strong adhesion between the transferred film and the glass wafer was verified by standard tape adhesion tests. This process will pave the way for future generations of Si-based microelectronics including bioelectronics.

Authors:
; ; ; ; ;  [1]
  1. Semiconductor Process Technologies Laboratory, Institute of Microelectronics (IME), 11 Science Park Road, Singapore Science Park II, Singapore 117685 (Singapore)
Publication Date:
OSTI Identifier:
20702601
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 87; Journal Issue: 7; Other Information: DOI: 10.1063/1.2011772; (c) 2005 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ADHESION; AUGER ELECTRON SPECTROSCOPY; BONDING; EPITAXY; ETCHING; GRINDING; LAYERS; MICROELECTRONICS; MONOCRYSTALS; PYREX; SEMICONDUCTOR MATERIALS; SILICON; TEMPERATURE RANGE 0400-1000 K; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY; X-RAY DIFFRACTION

Citation Formats

Teh, W H, Trigg, Alastair, Tung, C H, Kumar, R, Balasubramanian, N, and Kwong, D L. 200 mm wafer-scale epitaxial transfer of single crystal Si on glass by anodic bonding of silicon-on-insulator wafers. United States: N. p., 2005. Web. doi:10.1063/1.2011772.
Teh, W H, Trigg, Alastair, Tung, C H, Kumar, R, Balasubramanian, N, & Kwong, D L. 200 mm wafer-scale epitaxial transfer of single crystal Si on glass by anodic bonding of silicon-on-insulator wafers. United States. doi:10.1063/1.2011772.
Teh, W H, Trigg, Alastair, Tung, C H, Kumar, R, Balasubramanian, N, and Kwong, D L. Mon . "200 mm wafer-scale epitaxial transfer of single crystal Si on glass by anodic bonding of silicon-on-insulator wafers". United States. doi:10.1063/1.2011772.
@article{osti_20702601,
title = {200 mm wafer-scale epitaxial transfer of single crystal Si on glass by anodic bonding of silicon-on-insulator wafers},
author = {Teh, W H and Trigg, Alastair and Tung, C H and Kumar, R and Balasubramanian, N and Kwong, D L},
abstractNote = {We report a low-temperature (350 deg. C) anodic bonding followed by grind/etch-back method for a 200 mm wafer-scale epitaxial transfer of ultrathin (1.9 kA) single crystalline Si on Pyrex glass. Standard back-end-of-line 3 kA SiN/3 kA undoped silicon glass passivating films were used as the buffer layers between the silicon-on-insulator wafer and the glass wafer. The quality and strain-free state of the transferred transparent Si film to glass was characterized by cross-sectional transmission electron microscopy, x-ray diffraction (XRD), and high-resolution XRD. Complete removal of the bulk Si after bonding was ascertained by Auger electron spectroscopy spectra and depth profiling. Strong adhesion between the transferred film and the glass wafer was verified by standard tape adhesion tests. This process will pave the way for future generations of Si-based microelectronics including bioelectronics.},
doi = {10.1063/1.2011772},
journal = {Applied Physics Letters},
issn = {0003-6951},
number = 7,
volume = 87,
place = {United States},
year = {2005},
month = {8}
}