200 mm wafer-scale epitaxial transfer of single crystal Si on glass by anodic bonding of silicon-on-insulator wafers
- Semiconductor Process Technologies Laboratory, Institute of Microelectronics (IME), 11 Science Park Road, Singapore Science Park II, Singapore 117685 (Singapore)
We report a low-temperature (350 deg. C) anodic bonding followed by grind/etch-back method for a 200 mm wafer-scale epitaxial transfer of ultrathin (1.9 kA) single crystalline Si on Pyrex glass. Standard back-end-of-line 3 kA SiN/3 kA undoped silicon glass passivating films were used as the buffer layers between the silicon-on-insulator wafer and the glass wafer. The quality and strain-free state of the transferred transparent Si film to glass was characterized by cross-sectional transmission electron microscopy, x-ray diffraction (XRD), and high-resolution XRD. Complete removal of the bulk Si after bonding was ascertained by Auger electron spectroscopy spectra and depth profiling. Strong adhesion between the transferred film and the glass wafer was verified by standard tape adhesion tests. This process will pave the way for future generations of Si-based microelectronics including bioelectronics.
- OSTI ID:
- 20702601
- Journal Information:
- Applied Physics Letters, Vol. 87, Issue 7; Other Information: DOI: 10.1063/1.2011772; (c) 2005 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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