Effect of annealing on leakage current in Ba{sub 0.5}Sr{sub 0.5}TiO{sub 3} and Ba{sub 0.96}Ca{sub 0.04}Ti{sub 0.84}Zr{sub 0.16}O{sub 3} thin films with Pt electrodes
- Applied Ceramics Research, Colorado Springs, Colorado 80919 (United States)
Ba{sub 0.96}Ca{sub 0.04}Ti{sub 0.84}Zr{sub 0.16}O{sub 3} (BCTZ) and Ba{sub 0.5}Sr{sub 0.5}TiO{sub 3} (BST) thin films were deposited at a substrate temperature of 450 deg. C via rf magnetron sputtering to form Pt/BCTZ/Pt and Pt/BST/Pt capacitors. BCTZ thin films hold promise as an alternative to BST in capacitor applications due to the resistance of BCTZ to reducing atmospheres. In order to produce BST films with low dc leakage current, oxygen is routinely used during film growth and often afterwards during anneals. The effect of postannealing the capacitors in either forming gas or oxygen at temperatures up to 700 deg. C (BST) and 800 deg. C (BCTZ) were studied. The leakage mechanism is shown to be dominated by Schottky emission and the Schottky barrier height is reported as a function of anneal gas composition and anneal temperature.
- OSTI ID:
- 20702586
- Journal Information:
- Applied Physics Letters, Vol. 87, Issue 3; Other Information: DOI: 10.1063/1.1990250; (c) 2005 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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