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Title: Achieving epitaxy and intense luminescence in Ge/Rb-implanted {alpha}-quartz

Abstract

The luminescence properties of ion-beam doped silica and quartz depend sensitively on the ion species and fluence and the thermal processing during and after ion implantation. In an attempt to achieve high luminescence intensity and full planar recrystallization of {alpha}-quartz, we studied double Ge/Rb-ion implantation, where the Rb ions serve as a catalyst only. Synthetic {alpha}-quartz samples were irradiated with 175 keV Rb ions and subsequently with 120 keV Ge ions with fluences of 1x10{sup 14}-1x10{sup 16} ions/cm{sup 2} and postannealed at 1170 K in air. A comparative analysis of the epitaxy, migration of the implanted ions, and cathodoluminescence (CL) were carried out. The CL spectra exhibit three strong emission bands in the blue/violet range at 2.95, 3.25, and 3.53 eV, which were assigned to Rb- and/or Ge-related defect centers. For up to 10{sup 15} implanted Ge ions/cm{sup 2}, large fraction (75%) of the Ge atoms reach substitutional Si sites after the epitaxy.

Authors:
; ; ;
Publication Date:
OSTI Identifier:
20702568
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 87; Journal Issue: 2; Other Information: DOI: 10.1063/1.1994953; (c) 2005 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; AIR; ANNEALING; CATALYSTS; CATHODOLUMINESCENCE; DOPED MATERIALS; EPITAXY; GERMANIUM IONS; ION BEAMS; ION IMPLANTATION; KEV RANGE 100-1000; QUARTZ; RECRYSTALLIZATION; RUBIDIUM IONS; SEMICONDUCTOR MATERIALS; SILICA; ULTRAVIOLET SPECTRA; VISIBLE SPECTRA

Citation Formats

Sahoo, P K, Gasiorek, S, Lieb, K P, Arstila, K, Keinonen, J., and Accelerator Laboratory, University of Helsinki, FIN-00014 Helsinki. Achieving epitaxy and intense luminescence in Ge/Rb-implanted {alpha}-quartz. United States: N. p., 2005. Web. doi:10.1063/1.1994953.
Sahoo, P K, Gasiorek, S, Lieb, K P, Arstila, K, Keinonen, J., & Accelerator Laboratory, University of Helsinki, FIN-00014 Helsinki. Achieving epitaxy and intense luminescence in Ge/Rb-implanted {alpha}-quartz. United States. https://doi.org/10.1063/1.1994953
Sahoo, P K, Gasiorek, S, Lieb, K P, Arstila, K, Keinonen, J., and Accelerator Laboratory, University of Helsinki, FIN-00014 Helsinki. 2005. "Achieving epitaxy and intense luminescence in Ge/Rb-implanted {alpha}-quartz". United States. https://doi.org/10.1063/1.1994953.
@article{osti_20702568,
title = {Achieving epitaxy and intense luminescence in Ge/Rb-implanted {alpha}-quartz},
author = {Sahoo, P K and Gasiorek, S and Lieb, K P and Arstila, K and Keinonen, J. and Accelerator Laboratory, University of Helsinki, FIN-00014 Helsinki},
abstractNote = {The luminescence properties of ion-beam doped silica and quartz depend sensitively on the ion species and fluence and the thermal processing during and after ion implantation. In an attempt to achieve high luminescence intensity and full planar recrystallization of {alpha}-quartz, we studied double Ge/Rb-ion implantation, where the Rb ions serve as a catalyst only. Synthetic {alpha}-quartz samples were irradiated with 175 keV Rb ions and subsequently with 120 keV Ge ions with fluences of 1x10{sup 14}-1x10{sup 16} ions/cm{sup 2} and postannealed at 1170 K in air. A comparative analysis of the epitaxy, migration of the implanted ions, and cathodoluminescence (CL) were carried out. The CL spectra exhibit three strong emission bands in the blue/violet range at 2.95, 3.25, and 3.53 eV, which were assigned to Rb- and/or Ge-related defect centers. For up to 10{sup 15} implanted Ge ions/cm{sup 2}, large fraction (75%) of the Ge atoms reach substitutional Si sites after the epitaxy.},
doi = {10.1063/1.1994953},
url = {https://www.osti.gov/biblio/20702568}, journal = {Applied Physics Letters},
issn = {0003-6951},
number = 2,
volume = 87,
place = {United States},
year = {Mon Jul 11 00:00:00 EDT 2005},
month = {Mon Jul 11 00:00:00 EDT 2005}
}