Memory characteristics of silicon nitride with silicon nanocrystals as a charge trapping layer of nonvolatile memory devices

Journal Article · Mon Jun 20 00:00:00 EDT 2005 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.1951060· OSTI ID:20702481

Choi, Sangmoo; Yang, Hyundeok; Chang, Man; Baek, Sungkweon; Hwang, Hyunsang; Jeon, Sanghun; Kim, Juhyung; Kim, Chungwoo ^[1]

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1. Department of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju 500-712 (Korea, Republic of)

Silicon nitride with silicon nanocrystals formed by low-energy silicon plasma immersion ion implantation has been investigated as a charge trapping layer of a polycrystalline silicon-oxide-nitride-oxide-silicon-type nonvolatile memory device. Compared with the control sample without silicon nanocrystals, silicon nitride with silicon nanocrystals provides excellent memory characteristics, such as larger width of capacitance-voltage hysteresis, higher program/erase speed, and lower charge loss rate at elevated temperature. These improved memory characteristics are derived by incorporation of silicon nanocrystals into the charge trapping layer as additional accessible charge traps with a deeper effective trap energy level.

• OSTI ID: 20702481
• Journal Information: Applied Physics Letters, Vol. 86, Issue 25; Other Information: DOI: 10.1063/1.1951060; (c) 2005 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CAPACITANCE
ION IMPLANTATION
LAYERS
MEMORY DEVICES
NANOSTRUCTURES
POLYCRYSTALS
SEMICONDUCTOR MATERIALS
SILICON
SILICON NITRIDES
SILICON OXIDES
TRAPPING