Study on anomalous n-type conduction of P-doped ZnO using P{sub 2}O{sub 5} dopant source
- Institute of High Performance Computing, 1 Science Park Road, no. 01-01 The Capricorn, Singapore 117528 (Singapore)
The unexpected n-type conduction observed in P-doped ZnO thin films fabricated from rf magnetron sputtering, was studied systematically through a combined approach of experiment and computer modeling. The carrier stability was predicted from first-principles density functional theory and chemical thermodynamic calculations. It demonstrated that, under oxygen-poor growth condition and low temperature, the stable doping defect P{sub O}{sup -1} may have negative effect on n-type conduction and, under oxygen-poor growth condition and high temperature, the stable doping defect may contribute significantly to the n-type conduction. Furthermore, under oxygen-rich growth condition, the stable doping defect P{sub Zn}{sup 1} may help to maintain the n-type conduction at high oxygen partial pressures. Our model predictions are in good agreement with experimental observations in anomalous conduction of P{sub 2}O{sub 5}-doped ZnO thin films and provide scientific explanation. This research not only revealed increased fundamental understanding on electronic behaviors but also provided a fabrication strategy for P-doped n-type ZnO.
- OSTI ID:
- 20702398
- Journal Information:
- Applied Physics Letters, Vol. 86, Issue 21; Other Information: DOI: 10.1063/1.1938249; (c) 2005 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
Similar Records
Growth and conduction mechanism of As-doped p-type ZnO thin films deposited by MOCVD
Growth of Cu{sub 2}O on Ga-doped ZnO and their interface energy alignment for thin film solar cells