Enhanced stress relaxation in ultrathin SiGe-on-insulator by H{sup +}-implantation-assisted oxidation
- Department of Electronics, Kyushu University, 6-10-1 Hakozaki, Fukuoka 812-8581 (Japan)
Effects of H{sup +} implantation ({<=}5x10{sup 16} cm{sup -2}) on stress relaxation in an oxidation-induced Ge condensation method have been investigated to form stress-relaxed ultrathin ({approx}30 nm) SiGe-on-insulator (SGOI) virtual substrates. High-dose ({>=}10{sup 15} cm{sup -2}) implantation enhanced stress relaxation, which was attributed to bond breaking at the SiGe/buried SiO{sub 2} interface. However, oxidation velocity was also enhanced due to irradiation defects. Two-step annealing (500 deg. C for 30 min and 850 deg. C for 60 min) before oxidation was proposed to remove irradiation defects. This achieved enhanced stress relaxation in ultrathin SGOI without changing oxidation velocity.
- OSTI ID:
- 20702395
- Journal Information:
- Applied Physics Letters, Vol. 86, Issue 21; Other Information: DOI: 10.1063/1.1935028; (c) 2005 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
Similar Records
Highly strain-relaxed ultrathin SiGe-on-insulator structure by Ge condensation process combined with H{sup +} irradiation and postannealing
Defect production in strained p-type Si{sub 1-x}Ge{sub x} by Er implantation
Rare Gas Ion Implanted-Silicon Template for the Growth of Relaxed Si1-xGex/Si (100)
Journal Article
·
Mon Apr 03 00:00:00 EDT 2006
· Applied Physics Letters
·
OSTI ID:20702395
+5 more
Defect production in strained p-type Si{sub 1-x}Ge{sub x} by Er implantation
Journal Article
·
Sat Jan 01 00:00:00 EST 2011
· Journal of Applied Physics
·
OSTI ID:20702395
+1 more
Rare Gas Ion Implanted-Silicon Template for the Growth of Relaxed Si1-xGex/Si (100)
Journal Article
·
Mon Nov 13 00:00:00 EST 2006
· AIP Conference Proceedings
·
OSTI ID:20702395
+3 more