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Title: Self-Assembly of Parallel Atomic Wires and Periodic Clusters of Silicon on a Vicinal Si(111) Surface

Abstract

Silicon self-assembly at step edges in the initial stage of homoepitaxial growth on a vicinal Si(111) surface is studied by scanning tunneling microscopy. The resulting atomic structures change dramatically from a parallel array of 0.7 nm wide wires to one-dimensionally aligned periodic clusters of diameter {approx}2 nm and periodicity 2.7 nm in the very narrow range of growth temperatures between 400 and 300 deg. C. These nanostructures are expected to play important roles in future developments of silicon quantum computers. Mechanisms leading to such distinct structures are discussed.

Authors:
; ;  [1]
  1. Department of Applied Physics and Physico-Informatics and CREST-JST, Keio University, Yokohama 223-8522 (Japan)
Publication Date:
OSTI Identifier:
20699398
Resource Type:
Journal Article
Journal Name:
Physical Review Letters
Additional Journal Information:
Journal Volume: 95; Journal Issue: 10; Other Information: DOI: 10.1103/PhysRevLett.95.106101; (c) 2005 The American Physical Society; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0031-9007
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CRYSTAL GROWTH; EPITAXY; INFORMATION THEORY; LAYERS; NANOSTRUCTURES; PERIODICITY; QUANTUM COMPUTERS; QUANTUM MECHANICS; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTOR MATERIALS; SILICON; SURFACES; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE 0400-1000 K; WIRES

Citation Formats

Sekiguchi, Takeharu, Yoshida, Shunji, and Itoh, Kohei M. Self-Assembly of Parallel Atomic Wires and Periodic Clusters of Silicon on a Vicinal Si(111) Surface. United States: N. p., 2005. Web. doi:10.1103/PhysRevLett.95.106101.
Sekiguchi, Takeharu, Yoshida, Shunji, & Itoh, Kohei M. Self-Assembly of Parallel Atomic Wires and Periodic Clusters of Silicon on a Vicinal Si(111) Surface. United States. doi:10.1103/PhysRevLett.95.106101.
Sekiguchi, Takeharu, Yoshida, Shunji, and Itoh, Kohei M. Fri . "Self-Assembly of Parallel Atomic Wires and Periodic Clusters of Silicon on a Vicinal Si(111) Surface". United States. doi:10.1103/PhysRevLett.95.106101.
@article{osti_20699398,
title = {Self-Assembly of Parallel Atomic Wires and Periodic Clusters of Silicon on a Vicinal Si(111) Surface},
author = {Sekiguchi, Takeharu and Yoshida, Shunji and Itoh, Kohei M.},
abstractNote = {Silicon self-assembly at step edges in the initial stage of homoepitaxial growth on a vicinal Si(111) surface is studied by scanning tunneling microscopy. The resulting atomic structures change dramatically from a parallel array of 0.7 nm wide wires to one-dimensionally aligned periodic clusters of diameter {approx}2 nm and periodicity 2.7 nm in the very narrow range of growth temperatures between 400 and 300 deg. C. These nanostructures are expected to play important roles in future developments of silicon quantum computers. Mechanisms leading to such distinct structures are discussed.},
doi = {10.1103/PhysRevLett.95.106101},
journal = {Physical Review Letters},
issn = {0031-9007},
number = 10,
volume = 95,
place = {United States},
year = {2005},
month = {9}
}