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Title: Magnetron sputter epitaxy of wurtzite Al{sub 1-x}In{sub x}N(0.1<x<0.9) by dual reactive dc magnetron sputter deposition

Abstract

Ternary wurtzite Al{sub 1-x}In{sub x}N thin films with compositions throughout the miscibility gap have been grown onto seed layers of TiN and ZrN by magnetron sputter epitaxy (MSE) using dual reactive direct current magnetron sputter deposition under ultra high vacuum conditions. The film compositions were calculated using Vegard's law from lattice parameters determined by x-ray diffraction (XRD). XRD showed that single-phase Al{sub 1-x}In{sub x}N alloy films in the wurtzite structure with [0.10<x<0.90] could be obtained at substrate temperatures up to 600 deg. C by heteroepitaxial growth. Epitaxial growth at 600 deg. C gave the crystallographic relations Al{sub 1-x}In{sub x}N(0001)//TiN,ZrN(111) and Al{sub 1-x}In{sub x}N<10-10>//TiN,ZrN<110>. At higher substrate temperatures almost pure AlN was formed. The microstructure of the films was also investigated by high-resolution electron microscopy. A columnar growth mode with epitaxial column widths from 10 to 200 nm was observed. Rocking curve full-width-at-half-maximum measurements revealed highly stressed lattices for growth onto TiN at 600 deg. C. Pseudobinary MSE growth phase field diagrams for Al{sub 1-x}In{sub x}N onto ZrN and TiN were established for substrate temperatures up to 1000 deg. C. Large regimes for single-phase solid solutions were thus identified with In being the diffusing species.

Authors:
; ; ; ;  [1]
  1. Thin Film Physics Division, Department of Physics and Measurement Technology (IFM), Linkoeping University, SE-581 83 Linkoeping (Sweden)
Publication Date:
OSTI Identifier:
20668301
Resource Type:
Journal Article
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 97; Journal Issue: 8; Other Information: DOI: 10.1063/1.1870111; (c) 2005 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0021-8979
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ALUMINIUM NITRIDES; CRYSTAL GROWTH; CRYSTAL STRUCTURE; CRYSTALLOGRAPHY; DEPOSITION; EPITAXY; INDIUM NITRIDES; LATTICE PARAMETERS; MICROSTRUCTURE; SEMICONDUCTOR MATERIALS; SOLID SOLUTIONS; SOLUBILITY; SPUTTERING; STOICHIOMETRY; TEMPERATURE RANGE 0400-1000 K; THIN FILMS; TITANIUM NITRIDES; TRANSMISSION ELECTRON MICROSCOPY; X-RAY DIFFRACTION; ZIRCONIUM NITRIDES

Citation Formats

Seppaenen, T, Persson, P O.A., Hultman, L, Birch, J, Radnoczi, G Z, and Research Institute for Technical Physics and Materials Science. Magnetron sputter epitaxy of wurtzite Al{sub 1-x}In{sub x}N(0.1<x<0.9) by dual reactive dc magnetron sputter deposition. United States: N. p., 2005. Web. doi:10.1063/1.1870111.
Seppaenen, T, Persson, P O.A., Hultman, L, Birch, J, Radnoczi, G Z, & Research Institute for Technical Physics and Materials Science. Magnetron sputter epitaxy of wurtzite Al{sub 1-x}In{sub x}N(0.1<x<0.9) by dual reactive dc magnetron sputter deposition. United States. doi:10.1063/1.1870111.
Seppaenen, T, Persson, P O.A., Hultman, L, Birch, J, Radnoczi, G Z, and Research Institute for Technical Physics and Materials Science. Fri . "Magnetron sputter epitaxy of wurtzite Al{sub 1-x}In{sub x}N(0.1<x<0.9) by dual reactive dc magnetron sputter deposition". United States. doi:10.1063/1.1870111.
@article{osti_20668301,
title = {Magnetron sputter epitaxy of wurtzite Al{sub 1-x}In{sub x}N(0.1<x<0.9) by dual reactive dc magnetron sputter deposition},
author = {Seppaenen, T and Persson, P O.A. and Hultman, L and Birch, J and Radnoczi, G Z and Research Institute for Technical Physics and Materials Science},
abstractNote = {Ternary wurtzite Al{sub 1-x}In{sub x}N thin films with compositions throughout the miscibility gap have been grown onto seed layers of TiN and ZrN by magnetron sputter epitaxy (MSE) using dual reactive direct current magnetron sputter deposition under ultra high vacuum conditions. The film compositions were calculated using Vegard's law from lattice parameters determined by x-ray diffraction (XRD). XRD showed that single-phase Al{sub 1-x}In{sub x}N alloy films in the wurtzite structure with [0.10<x<0.90] could be obtained at substrate temperatures up to 600 deg. C by heteroepitaxial growth. Epitaxial growth at 600 deg. C gave the crystallographic relations Al{sub 1-x}In{sub x}N(0001)//TiN,ZrN(111) and Al{sub 1-x}In{sub x}N<10-10>//TiN,ZrN<110>. At higher substrate temperatures almost pure AlN was formed. The microstructure of the films was also investigated by high-resolution electron microscopy. A columnar growth mode with epitaxial column widths from 10 to 200 nm was observed. Rocking curve full-width-at-half-maximum measurements revealed highly stressed lattices for growth onto TiN at 600 deg. C. Pseudobinary MSE growth phase field diagrams for Al{sub 1-x}In{sub x}N onto ZrN and TiN were established for substrate temperatures up to 1000 deg. C. Large regimes for single-phase solid solutions were thus identified with In being the diffusing species.},
doi = {10.1063/1.1870111},
journal = {Journal of Applied Physics},
issn = {0021-8979},
number = 8,
volume = 97,
place = {United States},
year = {2005},
month = {4}
}