Dynamic and static photoresponse of ultraviolet-detecting thin-film transistors based on transparent NiO{sub x} electrodes and an n-ZnO channel
- Institute of Physics and Applied Physics, Yonsei University, Seoul 120-749 (Korea, Republic of)
We report on the fabrication of an ultraviolet (UV)-detecting thin-film transistor (TFT) using NiO{sub x} as source/drain electrodes and n-ZnO as its channel layer deposited on a SiO{sub 2}/p-Si substrate. Rapid thermal annealing of the TFT was carried out in an O{sub 2} ambient at 350 deg. C for 1 min to increase the transparency of NiO{sub x}. In an accumulation mode with a gate bias of 40 V, a drain current of only 2 {mu}A was obtained in the dark. However, under an illumination of UV light with wavelength 325 nm, the drain current dramatically increased up to 13 {mu}A. Under UV photons with wavelength 254 nm or energy of 4.9 eV, much higher than 4.1 eV, the energy gap of NiO{sub x}, the photocurrent slightly decreased to {approx}10 {mu}A due to the absorption by NiO{sub x}. These photoelectric effects were more pronounced under a gate-bias condition for a depletion (off) mode. The UV-dynamic behavior of our TFTs was also investigated, yielding the UV response time of {approx}300 ms and UV-on/off ratio of about 10.
- OSTI ID:
- 20668296
- Journal Information:
- Journal of Applied Physics, Vol. 97, Issue 7; Other Information: DOI: 10.1063/1.1855390; (c) 2005 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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