Contribution of the metal/SiO{sub 2} interface potential to photoinduced switching in molecular single-electron tunneling junctions

Noguchi, Yutaka; Kubota, Tohru; Mashiko, Shinro; Wakayama, Yutaka

doi:10.1063/1.1862319

Title: Contribution of the metal/SiO{sub 2} interface potential to photoinduced switching in molecular single-electron tunneling junctions

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Abstract

Photoinduced switching of the Coulomb staircase in molecular single-electron tunneling junctions was previously observed. These junctions consisted of evaporated SiO{sub 2} insulator ({approx}5 nm), with tetrakis-3,5-di-t-butylphenyl-porphyrin (H{sub 2}-TBPP) molecules as Coulomb islands, sandwiched between top and bottom electrodes. The reversible response and the relaxation time of the photoinduced switching suggest that this phenomenon depends on the properties of the metal/SiO{sub 2} interface rather than those of the H{sub 2}-TBPP molecule or SiO{sub 2} tunneling layer. We analyzed the photoinduced switching according to the theory of single-electron tunneling taking into account the discrete molecular energy states and the metal/SiO{sub 2} interfacial electrostatic phenomena. We conclude that the main contributor to the photoinduced shift was the electrostatic potential formed through the space-charge exchange at the metal/SiO{sub 2} interface.

Authors:

Noguchi, Yutaka; Kubota, Tohru; Mashiko, Shinro; Wakayama, Yutaka ^[1]

Kansai Advanced Research Center, National Institute of Information and Communications Technology, 588-2 Iwaoka, Nishi-ku, Kobe 651-2492 (Japan)

Publication Date:: Fri Apr 01 00:00:00 EST 2005

OSTI Identifier:: 20668275

Resource Type:: Journal Article

Journal Name:: Journal of Applied Physics

Additional Journal Information:: Journal Volume: 97; Journal Issue: 7; Other Information: DOI: 10.1063/1.1862319; (c) 2005 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0021-8979

Country of Publication:: United States

Language:: English

Subject:: 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ALUMINIUM; ELECTRODES; ELECTRONS; GOLD; HYDROGEN; INTERFERENCE; LAYERS; MAGNETIC ISLANDS; PORPHYRINS; QUANTUM ELECTRONICS; RELAXATION TIME; SILICON OXIDES; SPACE CHARGE; SUPERCONDUCTING JUNCTIONS; TUNNEL EFFECT; ULTRAVIOLET RADIATION

Citation Formats


                    Noguchi, Yutaka, Kubota, Tohru, Mashiko, Shinro, Wakayama, Yutaka, and Nanomaterials Laboratory, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044. Contribution of the metal/SiO{sub 2} interface potential to photoinduced switching in molecular single-electron tunneling junctions.  United States: N. p., 2005. 
        Web.  doi:10.1063/1.1862319.

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                    Noguchi, Yutaka, Kubota, Tohru, Mashiko, Shinro, Wakayama, Yutaka, & Nanomaterials Laboratory, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044. Contribution of the metal/SiO{sub 2} interface potential to photoinduced switching in molecular single-electron tunneling junctions.  United States.  https://doi.org/10.1063/1.1862319

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                    Noguchi, Yutaka, Kubota, Tohru, Mashiko, Shinro, Wakayama, Yutaka, and Nanomaterials Laboratory, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044. 2005.  
        "Contribution of the metal/SiO{sub 2} interface potential to photoinduced switching in molecular single-electron tunneling junctions".  United States.  https://doi.org/10.1063/1.1862319.

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@article{osti_20668275,

  title        = {Contribution of the metal/SiO{sub 2} interface potential to photoinduced switching in molecular single-electron tunneling junctions},

  author       = {Noguchi, Yutaka and Kubota, Tohru and Mashiko, Shinro and Wakayama, Yutaka and Nanomaterials Laboratory, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044},

  abstractNote = {Photoinduced switching of the Coulomb staircase in molecular single-electron tunneling junctions was previously observed. These junctions consisted of evaporated SiO{sub 2} insulator ({approx}5 nm), with tetrakis-3,5-di-t-butylphenyl-porphyrin (H{sub 2}-TBPP) molecules as Coulomb islands, sandwiched between top and bottom electrodes. The reversible response and the relaxation time of the photoinduced switching suggest that this phenomenon depends on the properties of the metal/SiO{sub 2} interface rather than those of the H{sub 2}-TBPP molecule or SiO{sub 2} tunneling layer. We analyzed the photoinduced switching according to the theory of single-electron tunneling taking into account the discrete molecular energy states and the metal/SiO{sub 2} interfacial electrostatic phenomena. We conclude that the main contributor to the photoinduced shift was the electrostatic potential formed through the space-charge exchange at the metal/SiO{sub 2} interface.},

  doi          = {10.1063/1.1862319},

  url          = {https://www.osti.gov/biblio/20668275},
  journal      = {Journal of Applied Physics},

  issn         = {0021-8979},

  number       = 7,

  volume       = 97,

  place        = {United States},

  year         = {Fri Apr 01 00:00:00 EST 2005},

  month        = {Fri Apr 01 00:00:00 EST 2005}

}

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