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Title: Fabrication of InAs quantum dots in AlAs/GaAs DBR pillar microcavities for single photon sources

Abstract

We report the molecular beam epitaxy growth of low-density strain-induced InAs quantum dots (QD) embedded in an AlAs/GaAs distributed Bragg reflector structure for a triggered photon source. By optimal selection of growth temperature, InAs deposited thickness and other experimental parameters, it is possible to grow low density (10/{mu}m{sup 2}) InAs quantum dots with a suitable emission wavelength for a triggered photon source. The empirical formulas for the refractive indices of AlAs and GaAs materials at high temperature over a wide wavelength range are constructed by combining high resolution x-ray diffraction, dynamic optical reflectivity, and optical reflectivity spectrum techniques. Utilizing the electron-beam lithography and electron-cyclotron-resonance plasma etching techniques, a micropost microcavity with the top diameter of 0.6 {mu}m and the post height of 4.2 {mu}m has been fabricated. Narrow, spectrally limited single QD emission embedded in a micropost microcavity is observed in the photoluminescence.

Authors:
; ; ; ; ; ;  [1]
  1. Quantum Entanglement Project, ICORP, JST, Edward L. Ginzton Laboratory, Stanford University, Stanford, California 94305-4085 (United States)
Publication Date:
OSTI Identifier:
20668271
Resource Type:
Journal Article
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 97; Journal Issue: 7; Other Information: DOI: 10.1063/1.1882764; (c) 2005 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0021-8979
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ALUMINIUM ARSENIDES; CRYSTAL GROWTH; ELECTRON BEAMS; ELECTRON CYCLOTRON-RESONANCE; ETCHING; FABRICATION; GALLIUM ARSENIDES; INDIUM ARSENIDES; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; PHOTONS; PLASMA; QUANTUM DOTS; REFLECTIVITY; REFRACTIVE INDEX; SEMICONDUCTOR MATERIALS; WAVELENGTHS; X-RAY DIFFRACTION

Citation Formats

Bingyang, Zhang, Solomon, Glenn S, Pelton, Matthew, Plant, Jocelyn, Santori, Charles, Vuckovic, Jelena, and Yamamoto, Yoshihisa. Fabrication of InAs quantum dots in AlAs/GaAs DBR pillar microcavities for single photon sources. United States: N. p., 2005. Web. doi:10.1063/1.1882764.
Bingyang, Zhang, Solomon, Glenn S, Pelton, Matthew, Plant, Jocelyn, Santori, Charles, Vuckovic, Jelena, & Yamamoto, Yoshihisa. Fabrication of InAs quantum dots in AlAs/GaAs DBR pillar microcavities for single photon sources. United States. https://doi.org/10.1063/1.1882764
Bingyang, Zhang, Solomon, Glenn S, Pelton, Matthew, Plant, Jocelyn, Santori, Charles, Vuckovic, Jelena, and Yamamoto, Yoshihisa. 2005. "Fabrication of InAs quantum dots in AlAs/GaAs DBR pillar microcavities for single photon sources". United States. https://doi.org/10.1063/1.1882764.
@article{osti_20668271,
title = {Fabrication of InAs quantum dots in AlAs/GaAs DBR pillar microcavities for single photon sources},
author = {Bingyang, Zhang and Solomon, Glenn S and Pelton, Matthew and Plant, Jocelyn and Santori, Charles and Vuckovic, Jelena and Yamamoto, Yoshihisa},
abstractNote = {We report the molecular beam epitaxy growth of low-density strain-induced InAs quantum dots (QD) embedded in an AlAs/GaAs distributed Bragg reflector structure for a triggered photon source. By optimal selection of growth temperature, InAs deposited thickness and other experimental parameters, it is possible to grow low density (10/{mu}m{sup 2}) InAs quantum dots with a suitable emission wavelength for a triggered photon source. The empirical formulas for the refractive indices of AlAs and GaAs materials at high temperature over a wide wavelength range are constructed by combining high resolution x-ray diffraction, dynamic optical reflectivity, and optical reflectivity spectrum techniques. Utilizing the electron-beam lithography and electron-cyclotron-resonance plasma etching techniques, a micropost microcavity with the top diameter of 0.6 {mu}m and the post height of 4.2 {mu}m has been fabricated. Narrow, spectrally limited single QD emission embedded in a micropost microcavity is observed in the photoluminescence.},
doi = {10.1063/1.1882764},
url = {https://www.osti.gov/biblio/20668271}, journal = {Journal of Applied Physics},
issn = {0021-8979},
number = 7,
volume = 97,
place = {United States},
year = {Fri Apr 01 00:00:00 EST 2005},
month = {Fri Apr 01 00:00:00 EST 2005}
}