High-mobility InGaAs/InAlAs pseudomorphic heterostructures on InP (001)
- Institut d'Electronique, de Microelectronique et de Nanotechnologie, Unite Mixte de Recherche (UMR) 8520 Centre National de la Recherche Scientifique (CNRS), Avenue Poincare, 59652 Villeneuve d'Ascq Cedex (France)
In this work, we study the growth of strained In{sub x}Ga{sub 1-x}As alloys on InP by gas source molecular-beam epitaxy in the 350-500 deg. C range. At low temperatures, we show that the As-rich (2x3) surface reconstruction promotes three-dimensional growth mode whereas the less As-rich (2x4) and cation-rich ones allow keeping two-dimensional growth. For heterostructures with a lattice-matched InAlAs barrier and a strained In{sub 0.75}Ga{sub 0.25}As channel, grown at 500 deg. C, the electron mobility rises to 16,000 and 139,000 cm{sup 2}/V s at 300 and 77 K, respectively, for a 140-A thick channel layer and a 400-A-thick spacer layer. Both values are among the best ones ever reported for an InGaAs/InAlAs heterostructure.
- OSTI ID:
- 20668224
- Journal Information:
- Journal of Applied Physics, Vol. 97, Issue 5; Other Information: DOI: 10.1063/1.1858871; (c) 2005 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
ALUMINIUM COMPOUNDS
CATIONS
CRYSTAL GROWTH
ELECTRON GAS
ELECTRON MOBILITY
GALLIUM ARSENIDES
HETEROJUNCTIONS
INDIUM ARSENIDES
INDIUM PHOSPHIDES
LAYERS
MOLECULAR BEAM EPITAXY
ROUGHNESS
SEMICONDUCTOR MATERIALS
SURFACES
TEMPERATURE DEPENDENCE
TEMPERATURE RANGE 0065-0273 K
TEMPERATURE RANGE 0273-0400 K
TEMPERATURE RANGE 0400-1000 K
THREE-DIMENSIONAL CALCULATIONS
TWO-DIMENSIONAL CALCULATIONS