Enhanced peak-to-valley current ratio in InGaAs/InAlAs trench-type quantum-wire negative differential resistance field-effect transistors

Journal Article · Tue Feb 01 00:00:00 EST 2005 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.1851595· OSTI ID:20665103

Sugaya, Takeyoshi; Jang, Kee-Youn; Hahn, Cheol-Koo; Ogura, Mutsuo; Komori, Kazuhiro; Shinoda, Akito; Yonei, Kenji ^[1]

---

1. National Institute of Advanced Industrial Science and Technology (AIST), and Core Research for Evolutional Science and Technology (CREST), Japan Science and Technology - JST, 1-1-1 Umezono, Tsukuba, Ibaraki, 305-8568 (Japan)

Trench-type narrow InGaAs quantum-wire field-effect transistors (QWR-FETs) have been fabricated on (311)A InP V-groove substrates by hydrogen-assisted molecular-beam epitaxy. Enhanced negative differential resistance (NDR) effects with a peak-to-valley ratio (PVR) as high as 13.3 have been observed at an onset voltage of 0.16 V in the QWR-FETs at 24 K. The PVR increased with reductions in the InGaAs epitaxial layer thickness, which caused an enhanced mobility difference between the QWR and side quantum wells (QWs). This forms a velocity modulation transistor based on the real-space transfer of electrons from the high mobility QWR to the low mobility side QWs. The NDR effects were observed up to 230 K as the gate length was decreased to 50 nm. A unique feature of the QWR-FET is that NDR effects are controllable with the gate bias in a three-terminal configuration.

• OSTI ID: 20665103
• Journal Information: Journal of Applied Physics, Vol. 97, Issue 3; Other Information: DOI: 10.1063/1.1851595; (c) 2005 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALUMINIUM COMPOUNDS
CRYSTAL GROWTH
ELECTRIC POTENTIAL
ELECTRON MOBILITY
ELECTRON TRANSFER
FIELD EFFECT TRANSISTORS
GALLIUM ARSENIDES
HYDROGEN
INDIUM PHOSPHIDES
LAYERS
MODULATION
MOLECULAR BEAM EPITAXY
QUANTUM WELLS
QUANTUM WIRES
SEMICONDUCTOR MATERIALS
SUBSTRATES
TEMPERATURE DEPENDENCE
TEMPERATURE RANGE 0013-0065 K
THICKNESS