Ferroelectric behaviors and charge carriers in Nd-doped Bi{sub 4}Ti{sub 3}O{sub 12} thin films

Journal Article · Tue Feb 01 00:00:00 EST 2005 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.1834986· OSTI ID:20665096

Gao, X S; Xue, J M; Wang, J ^[1]

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1. Department of Materials Science, Faculty of Science, National University of Singapore, Singapore 119260 (Singapore)

Nd-doped Bi{sub 4}Ti{sub 3}O{sub 12} thin films (Bi{sub 3.25}Nd{sub 0.85}){sub 4}Ti{sub 3}O{sub 12}, of layered perovskite structure were synthesized by rf sputtering, followed by postannealing at 600-700 deg. C. They show enhanced ferroelectricity with rising postannealing temperature in the range of 650-750 deg. C. When annealed at 700 deg. C, a remanent polarization 2P{sub r} of 25.2 {mu}C/cm{sup 2} and a coercive field E{sub c} of 87.2 kV/cm were measured at 9 V, together with an almost fatigue-free behavior up to 1.4x10{sup 10} switching cycles. Their ferroelectric, dielectric, and ac conductivity properties over the temperature range from 25 to 300 deg. C were studied over the frequency range of 0.1-1 MHz. Space-charge relaxation by oxygen vacancies was shown to play an important role in determining the dielectric and conductivity behaviors of Nd-doped Bi{sub 4}Ti{sub 3}O{sub 12} thin films.

• OSTI ID: 20665096
• Journal Information: Journal of Applied Physics, Vol. 97, Issue 3; Other Information: DOI: 10.1063/1.1834986; (c) 2005 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ANNEALING
BISMUTH COMPOUNDS
CHARGE CARRIERS
DIELECTRIC MATERIALS
DOPED MATERIALS
ELECTRIC CONDUCTIVITY
FATIGUE
NEODYMIUM COMPOUNDS
OXYGEN
PERMITTIVITY
PEROVSKITE
POLARIZATION
RELAXATION
SPACE CHARGE
SPUTTERING
TEMPERATURE DEPENDENCE
TEMPERATURE RANGE 0400-1000 K
THIN FILMS
TITANATES
VACANCIES