Fluence, flux, and implantation temperature dependence of ion-implantation-induced defect production in 4H-SiC
- Laboratory of Physics, Helsinki University of Technology, P.O. Box 1100, FIN-02015 HUT (Finland)
Vacancy-type defect production in Al- and Si-implanted 4H-SiC has been studied as a function of ion fluence, ion flux, and implantation temperature in the projected ion range region by positron annihilation spectroscopy and Rutherford backscattering techniques. Ion channeling measurements show that the concentration of displaced silicon atoms increases rapidly with increasing ion fluence. In the ion fluence interval of 10{sup 13}-10{sup 14} cm{sup -2} the positron annihilation parameters are roughly constant at a defect level tentatively associated with the divacancy V{sub C}V{sub Si}. Above the ion fluence of 10{sup 14} cm{sup -2} larger vacancy clusters are formed. For implantations as a function of ion flux (cm{sup -2} s{sup -1}), ion channeling and positron annihilation measurements behave similarly, i.e., indicating increasing damage in the projected range region with increasing ion flux. However, for samples implanted at different temperatures the positron annihilation parameter S shows a clear minimum at approximately 100 deg. C, whereas the normalized backscattering yield decrease continuously with increasing implantation temperature. This is explained by the formation of larger vacancy clusters when the implantation temperature is increased.
- OSTI ID:
- 20665082
- Journal Information:
- Journal of Applied Physics, Vol. 97, Issue 3; Other Information: DOI: 10.1063/1.1844618; (c) 2005 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
Similar Records
Defects in MeV Si-implanted Si probed with positrons
Elimination of carbon vacancies in 4H-SiC epi-layers by near-surface ion implantation: Influence of the ion species