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Title: Effect of YBa{sub 2}Cu{sub 3}O{sub 7-{delta}} film thickness on the dielectric properties of Ba{sub 0.1}Sr{sub 0.9}TiO{sub 3} in Ag/Ba{sub 0.1}Sr{sub 0.9}TiO{sub 3}/YBa{sub 2}Cu{sub 3}O{sub 7-{delta}}/LaAlO{sub 3} multilayer structures

Abstract

Ferroelectric and superconductor bilayers of Ba{sub 0.1}Sr{sub 0.9}TiO{sub 3} (BSTO)/YBa{sub 2}Cu{sub 3}O{sub 7-{delta}} (YBCO), with different YBCO film thicknesses, have been fabricated in situ by pulsed-laser deposition on 1.2 deg. vicinal LaAlO{sub 3} substrates. The dielectric properties of BSTO thin films were measured with a parallel-plate capacitor configuration in the temperature range of 77-300 K. We observed a strong dependence of the dielectric properties of BSTO thin films on the thickness of the YBCO layer. As the YBCO-film thickness increases, the temperature of the dielectric permittivity maximum of BSTO thin films shifts to higher values, and the leakage current and dielectric loss increase drastically, while the dielectric constant and dielectric tunability decrease remarkably. The results are explained in terms of the transformation in the growth mode of the YBCO layer from two-dimensional step flow to three-dimensional island that leads to significant deterioration in the dielectric properties of BSTO thin films. We propose that improved dielectric properties could be obtained by reasonably manipulating the growth mode of the YBCO layer in the multilayer structures.

Authors:
; ; ; ; ; ;  [1]
  1. National Laboratory for Superconductivity, Institute of Physics and Center for Condensed Matter Physics, Chinese Academy of Sciences, P.O. Box 603, Beijing 100080 (China)
Publication Date:
OSTI Identifier:
20664970
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 97; Journal Issue: 1; Other Information: DOI: 10.1063/1.1821644; (c) 2005 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ALUMINATES; BARIUM COMPOUNDS; CAPACITORS; CUPRATES; ENERGY BEAM DEPOSITION; EPITAXY; FERROELECTRIC MATERIALS; HIGH-TC SUPERCONDUCTORS; LANTHANUM COMPOUNDS; LASER RADIATION; LEAKAGE CURRENT; PERMITTIVITY; PULSED IRRADIATION; SILVER; STRONTIUM TITANATES; TEMPERATURE RANGE 0065-0273 K; TEMPERATURE RANGE 0273-0400 K; THICKNESS; THIN FILMS; YTTRIUM COMPOUNDS

Citation Formats

Zhu Xiaohong, Peng Wei, Li Jie, Chen Yingfei, Tian Haiyan, Xu Xiaoping, and Zheng Dongning. Effect of YBa{sub 2}Cu{sub 3}O{sub 7-{delta}} film thickness on the dielectric properties of Ba{sub 0.1}Sr{sub 0.9}TiO{sub 3} in Ag/Ba{sub 0.1}Sr{sub 0.9}TiO{sub 3}/YBa{sub 2}Cu{sub 3}O{sub 7-{delta}}/LaAlO{sub 3} multilayer structures. United States: N. p., 2005. Web. doi:10.1063/1.1821644.
Zhu Xiaohong, Peng Wei, Li Jie, Chen Yingfei, Tian Haiyan, Xu Xiaoping, & Zheng Dongning. Effect of YBa{sub 2}Cu{sub 3}O{sub 7-{delta}} film thickness on the dielectric properties of Ba{sub 0.1}Sr{sub 0.9}TiO{sub 3} in Ag/Ba{sub 0.1}Sr{sub 0.9}TiO{sub 3}/YBa{sub 2}Cu{sub 3}O{sub 7-{delta}}/LaAlO{sub 3} multilayer structures. United States. doi:10.1063/1.1821644.
Zhu Xiaohong, Peng Wei, Li Jie, Chen Yingfei, Tian Haiyan, Xu Xiaoping, and Zheng Dongning. Sat . "Effect of YBa{sub 2}Cu{sub 3}O{sub 7-{delta}} film thickness on the dielectric properties of Ba{sub 0.1}Sr{sub 0.9}TiO{sub 3} in Ag/Ba{sub 0.1}Sr{sub 0.9}TiO{sub 3}/YBa{sub 2}Cu{sub 3}O{sub 7-{delta}}/LaAlO{sub 3} multilayer structures". United States. doi:10.1063/1.1821644.
@article{osti_20664970,
title = {Effect of YBa{sub 2}Cu{sub 3}O{sub 7-{delta}} film thickness on the dielectric properties of Ba{sub 0.1}Sr{sub 0.9}TiO{sub 3} in Ag/Ba{sub 0.1}Sr{sub 0.9}TiO{sub 3}/YBa{sub 2}Cu{sub 3}O{sub 7-{delta}}/LaAlO{sub 3} multilayer structures},
author = {Zhu Xiaohong and Peng Wei and Li Jie and Chen Yingfei and Tian Haiyan and Xu Xiaoping and Zheng Dongning},
abstractNote = {Ferroelectric and superconductor bilayers of Ba{sub 0.1}Sr{sub 0.9}TiO{sub 3} (BSTO)/YBa{sub 2}Cu{sub 3}O{sub 7-{delta}} (YBCO), with different YBCO film thicknesses, have been fabricated in situ by pulsed-laser deposition on 1.2 deg. vicinal LaAlO{sub 3} substrates. The dielectric properties of BSTO thin films were measured with a parallel-plate capacitor configuration in the temperature range of 77-300 K. We observed a strong dependence of the dielectric properties of BSTO thin films on the thickness of the YBCO layer. As the YBCO-film thickness increases, the temperature of the dielectric permittivity maximum of BSTO thin films shifts to higher values, and the leakage current and dielectric loss increase drastically, while the dielectric constant and dielectric tunability decrease remarkably. The results are explained in terms of the transformation in the growth mode of the YBCO layer from two-dimensional step flow to three-dimensional island that leads to significant deterioration in the dielectric properties of BSTO thin films. We propose that improved dielectric properties could be obtained by reasonably manipulating the growth mode of the YBCO layer in the multilayer structures.},
doi = {10.1063/1.1821644},
journal = {Journal of Applied Physics},
number = 1,
volume = 97,
place = {United States},
year = {Sat Jan 01 00:00:00 EST 2005},
month = {Sat Jan 01 00:00:00 EST 2005}
}