Growth of Ti{sub 3}SiC{sub 2} thin films by elemental target magnetron sputtering

Journal Article · Mon Nov 01 00:00:00 EST 2004 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.1790571· OSTI ID:20662136

Emmerlich, Jens; Hoegberg, Hans; Sasvari, Szilvia; Persson, Per O.A.; Hultman, Lars; Palmquist, Jens-Petter; Jansson, Ulf; Molina-Aldareguia, Jon M; Czigany, Zsolt ^[1]

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1. Department of Physics, Linkoeping University, IFM, Thin Film Physics Division, SE-581 83 Linkoeping (Sweden)

Epitaxial Ti{sub 3}SiC{sub 2}(0001) thin films have been deposited by dc magnetron sputtering from three elemental targets of Ti, C, and Si onto MgO(111) and Al{sub 2}O{sub 3}(0001) substrates at temperatures of 800-900 deg. C. This process allows composition control to synthesize M{sub n+1}AX{sub n} (MAX) phases (M: early transition metal; A: A-group element; X: C and/or N; n=1-3) including Ti{sub 4}SiC{sub 3}. Depositions on MgO(100) substrates yielding the Ti-Si-C MAX phases with (1015), as the preferred orientation. Samples grown at different substrate temperatures, studied by means of transmission electron microscopy and x-ray diffraction investigations, revealed the constraints of Ti{sub 3}SiC{sub 2} nucleation due to kinetic limitations at substrate temperatures below 700 deg. C. Instead, there is a competitive TiC{sub x} growth with Si segregation to form twin boundaries or Si substitutional incorporation in TiC{sub x}. Physical properties of the as-deposited single-crystal Ti{sub 3}SiC{sub 2} films were determined. A low resistivity of 25 {mu}{omega} cm was measured. The Young's modulus, ascertained by nanoindentation, yielded a value of 343-370 GPa. For the mechanical deformation response of the material, probing with cube corner and Berkovich indenters showed an initial high hardness of almost 30 GPa. With increased maximum indentation loads, the hardness was observed to decrease toward bulk values as the characteristic kink formation sets in with dislocation ordering and delamination at basal planes.

• OSTI ID: 20662136
• Journal Information: Journal of Applied Physics, Vol. 96, Issue 9; Other Information: DOI: 10.1063/1.1790571; (c) 2004 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALUMINIUM OXIDES
CRYSTAL GROWTH
DEPOSITION
DISLOCATIONS
ELECTRIC CONDUCTIVITY
EPITAXY
GRAIN ORIENTATION
MAGNESIUM OXIDES
MAGNETRONS
MONOCRYSTALS
PRESSURE RANGE GIGA PA
SEGREGATION
SILICON COMPOUNDS
SPUTTERING
SUBSTRATES
THIN FILMS
TITANIUM COMPOUNDS
TRANSMISSION ELECTRON MICROSCOPY
X-RAY DIFFRACTION
YOUNG MODULUS