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Title: Growth of Ti{sub 3}SiC{sub 2} thin films by elemental target magnetron sputtering

Abstract

Epitaxial Ti{sub 3}SiC{sub 2}(0001) thin films have been deposited by dc magnetron sputtering from three elemental targets of Ti, C, and Si onto MgO(111) and Al{sub 2}O{sub 3}(0001) substrates at temperatures of 800-900 deg. C. This process allows composition control to synthesize M{sub n+1}AX{sub n} (MAX) phases (M: early transition metal; A: A-group element; X: C and/or N; n=1-3) including Ti{sub 4}SiC{sub 3}. Depositions on MgO(100) substrates yielding the Ti-Si-C MAX phases with (1015), as the preferred orientation. Samples grown at different substrate temperatures, studied by means of transmission electron microscopy and x-ray diffraction investigations, revealed the constraints of Ti{sub 3}SiC{sub 2} nucleation due to kinetic limitations at substrate temperatures below 700 deg. C. Instead, there is a competitive TiC{sub x} growth with Si segregation to form twin boundaries or Si substitutional incorporation in TiC{sub x}. Physical properties of the as-deposited single-crystal Ti{sub 3}SiC{sub 2} films were determined. A low resistivity of 25 {mu}{omega} cm was measured. The Young's modulus, ascertained by nanoindentation, yielded a value of 343-370 GPa. For the mechanical deformation response of the material, probing with cube corner and Berkovich indenters showed an initial high hardness of almost 30 GPa. With increased maximum indentation loads, the hardnessmore » was observed to decrease toward bulk values as the characteristic kink formation sets in with dislocation ordering and delamination at basal planes.« less

Authors:
; ; ; ; ; ; ; ;  [1]
  1. Department of Physics, Linkoeping University, IFM, Thin Film Physics Division, SE-581 83 Linkoeping (Sweden)
Publication Date:
OSTI Identifier:
20662136
Resource Type:
Journal Article
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 96; Journal Issue: 9; Other Information: DOI: 10.1063/1.1790571; (c) 2004 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0021-8979
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ALUMINIUM OXIDES; CRYSTAL GROWTH; DEPOSITION; DISLOCATIONS; ELECTRIC CONDUCTIVITY; EPITAXY; GRAIN ORIENTATION; MAGNESIUM OXIDES; MAGNETRONS; MONOCRYSTALS; PRESSURE RANGE GIGA PA; SEGREGATION; SILICON COMPOUNDS; SPUTTERING; SUBSTRATES; THIN FILMS; TITANIUM COMPOUNDS; TRANSMISSION ELECTRON MICROSCOPY; X-RAY DIFFRACTION; YOUNG MODULUS

Citation Formats

Emmerlich, Jens, Hoegberg, Hans, Sasvari, Szilvia, Persson, Per O.A., Hultman, Lars, Palmquist, Jens-Petter, Jansson, Ulf, Molina-Aldareguia, Jon M, Czigany, Zsolt, Department of Material Chemistry, Uppsala University, Angstroem Laboratory, P. O. Box 538, SE-751 21 Uppsala, CEIT, Centro de Estudios e Investigaciones Tecnicas e Gipuzkoa, P. Manuel Lardizabal 15, 20018 San Sebastian, and Research Institute for Technical Physics and Materials Science, P.O. Box 49, H-1525 Budapest. Growth of Ti{sub 3}SiC{sub 2} thin films by elemental target magnetron sputtering. United States: N. p., 2004. Web. doi:10.1063/1.1790571.
Emmerlich, Jens, Hoegberg, Hans, Sasvari, Szilvia, Persson, Per O.A., Hultman, Lars, Palmquist, Jens-Petter, Jansson, Ulf, Molina-Aldareguia, Jon M, Czigany, Zsolt, Department of Material Chemistry, Uppsala University, Angstroem Laboratory, P. O. Box 538, SE-751 21 Uppsala, CEIT, Centro de Estudios e Investigaciones Tecnicas e Gipuzkoa, P. Manuel Lardizabal 15, 20018 San Sebastian, & Research Institute for Technical Physics and Materials Science, P.O. Box 49, H-1525 Budapest. Growth of Ti{sub 3}SiC{sub 2} thin films by elemental target magnetron sputtering. United States. doi:10.1063/1.1790571.
Emmerlich, Jens, Hoegberg, Hans, Sasvari, Szilvia, Persson, Per O.A., Hultman, Lars, Palmquist, Jens-Petter, Jansson, Ulf, Molina-Aldareguia, Jon M, Czigany, Zsolt, Department of Material Chemistry, Uppsala University, Angstroem Laboratory, P. O. Box 538, SE-751 21 Uppsala, CEIT, Centro de Estudios e Investigaciones Tecnicas e Gipuzkoa, P. Manuel Lardizabal 15, 20018 San Sebastian, and Research Institute for Technical Physics and Materials Science, P.O. Box 49, H-1525 Budapest. Mon . "Growth of Ti{sub 3}SiC{sub 2} thin films by elemental target magnetron sputtering". United States. doi:10.1063/1.1790571.
@article{osti_20662136,
title = {Growth of Ti{sub 3}SiC{sub 2} thin films by elemental target magnetron sputtering},
author = {Emmerlich, Jens and Hoegberg, Hans and Sasvari, Szilvia and Persson, Per O.A. and Hultman, Lars and Palmquist, Jens-Petter and Jansson, Ulf and Molina-Aldareguia, Jon M and Czigany, Zsolt and Department of Material Chemistry, Uppsala University, Angstroem Laboratory, P. O. Box 538, SE-751 21 Uppsala and CEIT, Centro de Estudios e Investigaciones Tecnicas e Gipuzkoa, P. Manuel Lardizabal 15, 20018 San Sebastian and Research Institute for Technical Physics and Materials Science, P.O. Box 49, H-1525 Budapest},
abstractNote = {Epitaxial Ti{sub 3}SiC{sub 2}(0001) thin films have been deposited by dc magnetron sputtering from three elemental targets of Ti, C, and Si onto MgO(111) and Al{sub 2}O{sub 3}(0001) substrates at temperatures of 800-900 deg. C. This process allows composition control to synthesize M{sub n+1}AX{sub n} (MAX) phases (M: early transition metal; A: A-group element; X: C and/or N; n=1-3) including Ti{sub 4}SiC{sub 3}. Depositions on MgO(100) substrates yielding the Ti-Si-C MAX phases with (1015), as the preferred orientation. Samples grown at different substrate temperatures, studied by means of transmission electron microscopy and x-ray diffraction investigations, revealed the constraints of Ti{sub 3}SiC{sub 2} nucleation due to kinetic limitations at substrate temperatures below 700 deg. C. Instead, there is a competitive TiC{sub x} growth with Si segregation to form twin boundaries or Si substitutional incorporation in TiC{sub x}. Physical properties of the as-deposited single-crystal Ti{sub 3}SiC{sub 2} films were determined. A low resistivity of 25 {mu}{omega} cm was measured. The Young's modulus, ascertained by nanoindentation, yielded a value of 343-370 GPa. For the mechanical deformation response of the material, probing with cube corner and Berkovich indenters showed an initial high hardness of almost 30 GPa. With increased maximum indentation loads, the hardness was observed to decrease toward bulk values as the characteristic kink formation sets in with dislocation ordering and delamination at basal planes.},
doi = {10.1063/1.1790571},
journal = {Journal of Applied Physics},
issn = {0021-8979},
number = 9,
volume = 96,
place = {United States},
year = {2004},
month = {11}
}