Pulsed photothermal reflectance measurement of the thermal conductivity of sputtered aluminum nitride thin films

Journal Article · Fri Oct 15 00:00:00 EDT 2004 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.1785850· OSTI ID:20662121

Yimin, Zhao; Chunlin, Zhu; Sigen, Wang; Tian, J Z; Yang, D J; Chen, C K; Hao, Cheng; Hing, Peter ^[1]

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1. School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798 (Singapore)

We report on measurements of the thermal conductivity of reactively sputtered aluminum nitride (AlN) thin films with different thickness, ranging from 100 nm to 1 {mu}m, on silicon substrates. The measurements were made at room temperature using the pulsed photothermal reflectance technique. The thermal conductivities of the sample are found to be significantly lower than the single-crystal bulk AlN and increase with an increasing thickness. The thermal resistance at the interface between the AlN film and the silicon substrate is found to be about 7-8x10{sup -8} m{sup 2} K/W.

• OSTI ID: 20662121
• Journal Information: Journal of Applied Physics, Vol. 96, Issue 8; Other Information: DOI: 10.1063/1.1785850; (c) 2004 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALUMINIUM NITRIDES
CRYSTAL GROWTH
DEPOSITION
INTERFACES
MONOCRYSTALS
SEMICONDUCTOR MATERIALS
SILICON
SUBSTRATES
TEMPERATURE RANGE 0273-0400 K
THERMAL CONDUCTIVITY
THICKNESS
THIN FILMS
X-RAY PHOTOELECTRON SPECTROSCOPY