Incorporation of manganese into semiconducting ScN using radio frequency molecular beam epitaxy

Journal Article · Fri Oct 01 00:00:00 EDT 2004 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.1788842· OSTI ID:20662084

AL-Brithen, Hamad A; Haiqiang, Yang; Smith, Arthur R ^[1]

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1. Condensed Matter and Surface Science Program, Department of Physics and Astronomy, Ohio University, Athens, Ohio 45701 (United States)

The incorporation of manganese into semiconducting ScN, using radio frequency molecular beam epitaxy, has been investigated. X-ray diffraction and reflection high energy electron diffraction measurements show the face-centered tetragonal rocksalt-type crystal structure with Sc and Mn cations and N anions. In addition to the solute incorporation into the lattice, which is clear from the positions of the diffraction peaks, atomic force microscopy images show that the surface of the alloy grown at T{sub S}{<=}518 deg. C contains dot-like features, indicating surface accumulation. The areal dot density is found to decrease as the growth temperature increases, whereas the Mn incorporation increases at 518 deg. C. This behavior is suggestive of a thermally activated process, and it is well explained by an Arrhenius law, giving an activation energy (diffusion barrier) of 0.67 eV. Increasing the growth temperature to 612 deg. C leads to an increased desorption rate, resulting in little Mn incorporation. It has been found that the growth is nearly optimized at T{sub S}=518 deg. C for high Mn incorporation, smooth growth, and small accumulate density. The alloy is found to have lattice parameters which depend on the Mn/(Mn+Sc) bulk ratio. The alloy lattice constants follow Vegard's law depending on the Mn bulk fraction and the lattice constants of ScN and {theta}-phase MnN. The Mn incorporation and Mn incorporation coefficient for films grown at T{sub S}=518 deg. C increase as the Mn/(Mn+Sc) flux ratio increases.

• OSTI ID: 20662084
• Journal Information: Journal of Applied Physics, Vol. 96, Issue 7; Other Information: DOI: 10.1063/1.1788842; (c) 2004 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ACTIVATION ENERGY
ANIONS
ATOMIC FORCE MICROSCOPY
CATIONS
CRYSTAL GROWTH
CRYSTAL STRUCTURE
DESORPTION
DIFFUSION BARRIERS
ELECTRON DIFFRACTION
LATTICE PARAMETERS
MANGANESE
MANGANESE IONS
MOLECULAR BEAM EPITAXY
NITROGEN IONS
RADIOWAVE RADIATION
REFLECTION
SCANDIUM IONS
SCANDIUM NITRIDES
SEMICONDUCTOR MATERIALS
X-RAY DIFFRACTION