Optical and Electrical Properties of 4H-SiC Irradiated with Fast Neutrons and High-Energy Heavy Ions

Journal Article · Fri Oct 01 00:00:00 EDT 2004 · Semiconductors

DOI:https://doi.org/10.1134/1.1808826· OSTI ID:20658003

Kalinina, E V; Kholuyanov, G F; Onushkin, G A; Davydov, D V; Strel'chuk, A M ^[1]; Konstantinov, A O ^[2]; Hallen, A ^[3]; Nikiforov, A Yu ^[4]; Skuratov, V A ^[5]; Havancsak, K ^[6]

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1. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg, 194021 (Russian Federation)
2. ACREO AB, Electrum 236, SE 16440 Kista (Sweden)
3. Royal Institute of Technology (Department of Electronics), Electrum 229, SE 16440 Kista (Sweden)
4. Specialized Electronic Systems, Moscow, 115409 (Russian Federation)
5. Joint Institute for Nuclear Research, Dubna, 141980 (Russian Federation)
6. Eoetvoes University, Pazmany P. setany 1/A, H-1117 Budapest (Hungary)

Photoluminescence and deep-level transient spectroscopy are used to study the effect of irradiation with fast neutrons and high-energy Kr (235 MeV) and Bi (710 MeV) ions on the optical and electrical properties of high-resistivity high-purity n-type 4H-SiC epitaxial layers grown by chemical vapor deposition. Electrical characteristics were studied using the barrier structures based on these epitaxial layers: Schottky barriers with Al and Cr contacts and p{sup +}-n-n{sup +} diodes fabricated by Al ion implantation. According to the experimental data obtained, neutrons and high-energy ions give rise to the same defect-related centers. The results show that, even for the extremely high ionization density (34 keV/nm) characteristic of Bi ions, the formation of the defect structure in SiC single crystals is governed by energy losses of particles due to elastic collisions.

• OSTI ID: 20658003
• Journal Information: Semiconductors, Vol. 38, Issue 10; Other Information: Translated from Fizika i Tekhnika Poluprovodnikov, ISSN 0015-3222, 38, 1223-1227 (No. 10, 2004); DOI: 10.1134/1.1808826; (c) 2004 MAIK ''Nauka / Interperiodica''; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALUMINIUM IONS
BISMUTH IONS
CHEMICAL VAPOR DEPOSITION
DEEP LEVEL TRANSIENT SPECTROSCOPY
DEFECTS
ELECTRIC CONDUCTIVITY
EPITAXY
EXPERIMENTAL DATA
FAST NEUTRONS
HEAVY IONS
ION BEAMS
IRRADIATION
LAYERS
MEV RANGE 100-1000
MONOCRYSTALS
PHOTOLUMINESCENCE
POINT DEFECTS
SEMICONDUCTOR MATERIALS
SILICON CARBIDES