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Title: Laser Ablated and RF Sputtered BaTiO3 Thin Films for Use in Superconducting RF MEM Switches

Journal Article · · AIP Conference Proceedings
DOI:https://doi.org/10.1063/1.1774638· OSTI ID:20653231
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  1. Florida International University (FAST Center), Miami, Fl. 33174 (United States)
  2. Florida Agricultural University, Tallahassee, Fl. 32307 (United States)

In this work an investigative study of the crystal structure of BaTiO3 thin films prepared using two techniques (laser ablation and RF magnetron sputtering) is presented. These films are to be used as the insulation layer in a capacitively shunted superconducting RF MEM switch with an insertion loss of better than 0.05 dB and an isolation of 30 dB at 3 GHz. Using X-Ray diffraction, the aim of the study is to compare the quality of the sputtered and laser ablated films produced, and study their effect on the RF and mechanical performance of the switch. The crystal structure is expected to have an effect on the effective dielectric constant of the films, which in turn will affect the electrical performance of the switch. This work will report on these results and serve to further enhance the electrical performance of our MEM switches.

OSTI ID:
20653231
Journal Information:
AIP Conference Proceedings, Vol. 711, Issue 1; Conference: CEC 2003: Cryogenic engineering and international cryogenic materials conference on advances in cryogenic engineering, Anchorage, AK (United States), 22-26 Sep 2003; Other Information: DOI: 10.1063/1.1774638; (c) 2004 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
Country of Publication:
United States
Language:
English