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Title: Compositional study of silicon oxynitride thin films deposited using electron cyclotron resonance plasma-enhanced chemical vapor deposition technique

Abstract

We have used backscattering spectrometry and {sup 15}N({sup 1}H,{alpha},{gamma}){sup 12}C nuclear reaction analysis techniques to study in detail the variation in the composition of silicon oxynitride films with deposition parameters. The films were deposited using 2.45 GHz electron cyclotron resonance plasma-enhanced chemical vapor deposition (PECVD) technique from mixtures of precursors argon, nitrous oxide, and silane at deposition temperature 90 deg. C. The deposition pressure and nitrous oxide-to-silane gas flow rates ratio have been found to have a pronounced influence on the composition of the films. When the deposition pressure was varied for a given nitrous oxide-to-silane gas flow ratio, the amount of silicon and nitrogen increased with the deposition pressure, while the amount of oxygen decreased. For a given deposition pressure, the amount of incorporated nitrogen and hydrogen decreased while that of oxygen increased with increasing nitrous oxide-to-silane gas flow rates ratio. For nitrous oxide-to-silane gas flow ratio of 5, we obtained films which contained neither chemically bonded nor nonbonded nitrogen atoms as revealed by the results of infrared spectroscopy, backscattering spectrometry, and nuclear reaction analysis. Our results demonstrate the nitrogen-free nearly stoichiometric silicon dioxide films can be prepared from a mixture of precursors argon, nitrous oxide, and silane atmore » low substrate temperature using high-density PECVD technique. This avoids the use of a hazardous and an often forbidden pair of silane and oxygen gases in a plasma reactor.« less

Authors:
;  [1]
  1. Institut fuer Kernphysik, J.W. Goethe University, August-Euler-Strasse 6, 60486 Frankfurt (Germany)
Publication Date:
OSTI Identifier:
20637099
Resource Type:
Journal Article
Journal Name:
Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films
Additional Journal Information:
Journal Volume: 23; Journal Issue: 3; Other Information: DOI: 10.1116/1.1901665; (c) 2005 American Vacuum Society; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0734-2101
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 70 PLASMA PHYSICS AND FUSION TECHNOLOGY; ARGON; CARBON 12; CHEMICAL VAPOR DEPOSITION; ELECTRON CYCLOTRON-RESONANCE; GAS FLOW; GHZ RANGE 01-100; HYDROGEN 1; INFRARED SPECTRA; NITROGEN; NITROGEN 15; NITROUS OXIDE; NUCLEAR REACTION ANALYSIS; ORGANIC SILICON COMPOUNDS; OXYGEN; PLASMA; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SILANES; SILICON OXIDES; THIN FILMS

Citation Formats

Baumann, H, Sah, R E, and Fraunhofer Institute for Applied Solid State Physics, Tullastr. 72, 79108 Freiburg. Compositional study of silicon oxynitride thin films deposited using electron cyclotron resonance plasma-enhanced chemical vapor deposition technique. United States: N. p., 2005. Web. doi:10.1116/1.1901665.
Baumann, H, Sah, R E, & Fraunhofer Institute for Applied Solid State Physics, Tullastr. 72, 79108 Freiburg. Compositional study of silicon oxynitride thin films deposited using electron cyclotron resonance plasma-enhanced chemical vapor deposition technique. United States. https://doi.org/10.1116/1.1901665
Baumann, H, Sah, R E, and Fraunhofer Institute for Applied Solid State Physics, Tullastr. 72, 79108 Freiburg. Sun . "Compositional study of silicon oxynitride thin films deposited using electron cyclotron resonance plasma-enhanced chemical vapor deposition technique". United States. https://doi.org/10.1116/1.1901665.
@article{osti_20637099,
title = {Compositional study of silicon oxynitride thin films deposited using electron cyclotron resonance plasma-enhanced chemical vapor deposition technique},
author = {Baumann, H and Sah, R E and Fraunhofer Institute for Applied Solid State Physics, Tullastr. 72, 79108 Freiburg},
abstractNote = {We have used backscattering spectrometry and {sup 15}N({sup 1}H,{alpha},{gamma}){sup 12}C nuclear reaction analysis techniques to study in detail the variation in the composition of silicon oxynitride films with deposition parameters. The films were deposited using 2.45 GHz electron cyclotron resonance plasma-enhanced chemical vapor deposition (PECVD) technique from mixtures of precursors argon, nitrous oxide, and silane at deposition temperature 90 deg. C. The deposition pressure and nitrous oxide-to-silane gas flow rates ratio have been found to have a pronounced influence on the composition of the films. When the deposition pressure was varied for a given nitrous oxide-to-silane gas flow ratio, the amount of silicon and nitrogen increased with the deposition pressure, while the amount of oxygen decreased. For a given deposition pressure, the amount of incorporated nitrogen and hydrogen decreased while that of oxygen increased with increasing nitrous oxide-to-silane gas flow rates ratio. For nitrous oxide-to-silane gas flow ratio of 5, we obtained films which contained neither chemically bonded nor nonbonded nitrogen atoms as revealed by the results of infrared spectroscopy, backscattering spectrometry, and nuclear reaction analysis. Our results demonstrate the nitrogen-free nearly stoichiometric silicon dioxide films can be prepared from a mixture of precursors argon, nitrous oxide, and silane at low substrate temperature using high-density PECVD technique. This avoids the use of a hazardous and an often forbidden pair of silane and oxygen gases in a plasma reactor.},
doi = {10.1116/1.1901665},
url = {https://www.osti.gov/biblio/20637099}, journal = {Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films},
issn = {0734-2101},
number = 3,
volume = 23,
place = {United States},
year = {2005},
month = {5}
}