Optical activation of Si nanowires using Er-doped, sol-gel derived silica
- Department of Physics, Korea Advanced Institute of Science and Technology (KAIST), 373-1 Guseong-dong, Yuseong-gu, Daejeon (Korea, Republic of)
Optical activation of Si nanowires (Si-NWs) using sol-gel derived Er-doped silica is investigated. Si-NWs of about 100 nm diameter were grown on Si substrates by the vapor-liquid-solid method using Au catalysts and H{sub 2} diluted SiCl{sub 4}. Afterwards, Er-doped silica sol-gel solution was spin-coated, and annealed at 950 deg. C in flowing N{sub 2}/O{sub 2} environment. Such Er-doped silica/Si-NWs nanocomposite is found to combine the advantages of crystalline Si and silica to simultaneously achieve both high carrier-mediated excitation efficiency and high Er{sup 3+} luminescence efficiency while at the same time providing high areal density of Er{sup 3+} and easy current injection, indicating the possibility of developing sol-gel activated Si-NWs as a material platform for Si-based photonics.
- OSTI ID:
- 20637003
- Journal Information:
- Applied Physics Letters, Vol. 86, Issue 5; Other Information: DOI: 10.1063/1.1857072; (c) 2005 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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