Effects in synergistic blistering of silicon by coimplantation of H, D, and He ions

Journal Article · Mon Jan 31 00:00:00 EST 2005 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.1861502· OSTI ID:20636996

Moutanabbir, O; Terreault, B ^[1]

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1. INRS-EMT, Universite du Quebec, 1650 Boul. Lionel-Boulet, Varennes, Quebec J3X 1S2 (Canada)

Silicon blistering was achieved at unprecedently low ion fluences of 2x10{sup 15} He/cm{sup 2} (8 keV) followed by 6x10{sup 15} H/cm{sup 2} (5 keV), but no blistering occurs for reversed order (H+He), or (He+D) coimplantation up to a high fluence. Raman scattering data suggest that: (i) the He synergy is due to He assistance in the appearance of H-passivated internal surfaces and their pressurization at high temperature; (ii) the order effect is due to the destruction by the room-temperature He postbombardment of favorable Si-H structures; and (iii) the isotope effect is due to the deuterated multivacancies evolving into surprisingly stable interstitial and bond-centered configurations.

• OSTI ID: 20636996
• Journal Information: Applied Physics Letters, Vol. 86, Issue 5; Other Information: DOI: 10.1063/1.1861502; (c) 2005 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
DEUTERIUM IONS
HELIUM IONS
HYDROGEN IONS
IMPURITIES
INTERSTITIALS
ION IMPLANTATION
ISOTOPE EFFECTS
KEV RANGE 01-10
PRESSURIZATION
RAMAN EFFECT
RAMAN SPECTRA
SEMICONDUCTOR MATERIALS
SILICON
SURFACES
TEMPERATURE RANGE 0273-0400 K
VACANCIES