Effect of pressure on the deposition of hydrogen-free amorphous carbon and carbon nitride films by the pulsed cathodic arc discharge method
- Electrical Engineering Department, University of Applied Sciences Deggendorf, Deggendorf 94469 (Germany)
Hydrogen-free amorphous carbon (a-C) and carbon nitride (a-C:N) films were deposited using the pulsed cathodic arc discharge at different argon and nitrogen pressures. The surface and mechanical properties of these films were found to strongly depend on the gas pressure. The tetrahedral amorphous carbon and hard a-C:N films with smooth surfaces (rms roughness: 0.15 nm) were prepared at lower gas pressures (<6x10{sup -2} Pa). Incorporation of an increasing amount of nitrogen in a-C:N films caused a decrease in film hardness. All the films were covered with the thin (0.3-2 nm) graphite-like surface layers. The film hardness was correlated to the soft surface layer thickness, and the films with thinner surface layers exhibit higher hardness. The mean energies of pulsed plasma beams were measured as the functions of argon and nitrogen pressures. The mean energies of plasma beams decrease in an exponential fashion with increasing gas pressure due to the carbon ion collisions with the neutral gas species. The effects of mean energies of deposited species on the film deposition were explained in terms of the thermal spike migration of surface atoms. The formation of graphite-like surface layers is associated with the low-energy deposition process. The low-energy (<1-3 eV) species diffusing on film surface lead to the formation of graphite-like a-C films with plenty of grains. The higher-energy (>10 eV) species may produce the strong thermal spike at film surface, and contribute to the formation of sp{sup 3} bonded structure at a sp{sup 3} bonded matrix.
- OSTI ID:
- 20636774
- Journal Information:
- Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films, Vol. 22, Issue 6; Other Information: DOI: 10.1116/1.1798691; (c) 2004 American Vacuum Society; Country of input: International Atomic Energy Agency (IAEA); ISSN 0734-2101
- Country of Publication:
- United States
- Language:
- English
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