Formation of Si-based nano-island array on porous anodic alumina
- Department of Physics and Materials Science, City University of Hong Kong, Kowloon, Hong Kong (China)
- National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093 (China)
- Department of Physics, Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong (China)
Si-based nano-island arrays were fabricated on porous anodic alumina by two methods. In the first method, a thick silicon film was first deposited onto the surface with highly ordered bowl array prepared by anodizing an Al foil, followed by the formation of a polycrystalline silicon nano-island array on the surface close to the bowl array after dissolving aluminum. In the second method, porous anodization was performed on an Al thin film on Si and a SiO{sub 2} nano-island array was subsequently formed electrochemically. Time-resolved atomic force microscopy and photoluminescence were used to investigate the growth process as well as the mechanism of the growth process. Our proposed mechanism as well as assumptions made to formulate the model were found to be in agreement with the experimental results.
- OSTI ID:
- 20634808
- Journal Information:
- Acta Materialia, Vol. 52, Issue 19; Other Information: DOI: 10.1016/j.actamat.2004.08.024; PII: S1359-6454(04)00501-4; Copyright (c) 2004 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved; Country of input: International Atomic Energy Agency (IAEA); ISSN 1359-6454
- Country of Publication:
- United States
- Language:
- English
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