Surface ordering of (In,Ga)As quantum dots controlled by GaAs substrate indexes
Abstract
Self-organized surface ordering of (In,Ga)As quantum dots in a GaAs matrix was investigated using stacked multiple quantum dot layers prepared by molecular-beam epitaxy. While one-dimensional chain-like ordering is formed on singular and slightly misorientated GaAs(100) surfaces, we report on two-dimensional square-like ordering that appears on GaAs(n11)B, where n is 7, 5, 4, and 3. Using a technique to control surface diffusion, the different ordering patterns are found to result from the competition between anisotropic surface diffusion and anisotropic elastic matrix, a similar mechanism suggested before by Solomon [Appl. Phys. Lett. 84, 2073 (2004)].
- Authors:
-
- Department of Physics, University of Arkansas, Fayetteville, Arkansas 72701 (United States)
- Publication Date:
- OSTI Identifier:
- 20634465
- Resource Type:
- Journal Article
- Journal Name:
- Applied Physics Letters
- Additional Journal Information:
- Journal Volume: 85; Journal Issue: 21; Other Information: DOI: 10.1063/1.1823590; (c) 2004 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; ANISOTROPY; ATOMIC FORCE MICROSCOPY; DIFFUSION; GALLIUM ARSENIDES; INDIUM ARSENIDES; LAYERS; MOLECULAR BEAM EPITAXY; MORPHOLOGY; QUANTUM DOTS; SEMICONDUCTOR MATERIALS; SUBSTRATES; SURFACES; TOPOGRAPHY
Citation Formats
Wang, Zh M, Seydmohamadi, Sh, Lee, J H, and Salamo, G J. Surface ordering of (In,Ga)As quantum dots controlled by GaAs substrate indexes. United States: N. p., 2004.
Web. doi:10.1063/1.1823590.
Wang, Zh M, Seydmohamadi, Sh, Lee, J H, & Salamo, G J. Surface ordering of (In,Ga)As quantum dots controlled by GaAs substrate indexes. United States. https://doi.org/10.1063/1.1823590
Wang, Zh M, Seydmohamadi, Sh, Lee, J H, and Salamo, G J. 2004.
"Surface ordering of (In,Ga)As quantum dots controlled by GaAs substrate indexes". United States. https://doi.org/10.1063/1.1823590.
@article{osti_20634465,
title = {Surface ordering of (In,Ga)As quantum dots controlled by GaAs substrate indexes},
author = {Wang, Zh M and Seydmohamadi, Sh and Lee, J H and Salamo, G J},
abstractNote = {Self-organized surface ordering of (In,Ga)As quantum dots in a GaAs matrix was investigated using stacked multiple quantum dot layers prepared by molecular-beam epitaxy. While one-dimensional chain-like ordering is formed on singular and slightly misorientated GaAs(100) surfaces, we report on two-dimensional square-like ordering that appears on GaAs(n11)B, where n is 7, 5, 4, and 3. Using a technique to control surface diffusion, the different ordering patterns are found to result from the competition between anisotropic surface diffusion and anisotropic elastic matrix, a similar mechanism suggested before by Solomon [Appl. Phys. Lett. 84, 2073 (2004)].},
doi = {10.1063/1.1823590},
url = {https://www.osti.gov/biblio/20634465},
journal = {Applied Physics Letters},
issn = {0003-6951},
number = 21,
volume = 85,
place = {United States},
year = {Mon Nov 22 00:00:00 EST 2004},
month = {Mon Nov 22 00:00:00 EST 2004}
}
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