Fabrication of metal-oxide-semiconductor field-effect transistors using crystalline {gamma}-Al{sub 2}O{sub 3} films as the gate dielectrics
- Department of Electrical and Electronic Engineering, Toyohashi University of Technology, 1-1 Hibarigaoka, Tempaku-cho, Toyohashi, 441-8580 (Japan)
Crystalline {gamma}-Al{sub 2}O{sub 3} films were employed as high-{kappa} gate dielectrics in metal-oxide-semiconductor field-effect transistors (MOSFETs) and characterization of these devices was performed. The crystalline dielectric was deposited with thicknesses of 4.0-4.5 nm by mixed source molecular beam epitaxy and the capacitance equivalent thicknesses obtained were 2.7-2.9 nm. The MOSFETs had exceptionally steep subthreshold slopes (63-67 mV/decade), relatively low negative fixed charge densities (5-7x10{sup 12} cm{sup -2}) and interface state densities (2-3x10{sup 11} eV{sup -1} cm{sup -2}). The maximum values of the effective carrier mobilities were 145 cm{sup 2}/V s for electrons and 85 cm{sup 2}/V s for holes.
- OSTI ID:
- 20634463
- Journal Information:
- Applied Physics Letters, Vol. 85, Issue 21; Other Information: DOI: 10.1063/1.1826228; (c) 2004 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
Similar Records
Field-effect transistors with LaAlO{sub 3} and LaAlO{sub x}N{sub y} gate dielectrics deposited by laser molecular-beam epitaxy
Cubic HfO{sub 2} doped with Y{sub 2}O{sub 3} epitaxial films on GaAs (001) of enhanced dielectric constant