Effect of growth temperature on morphology, structure and luminescence of Eu-doped GaN thin films

Journal Article · Mon Nov 22 00:00:00 EST 2004 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.1825619· OSTI ID:20634450

Liu, Q L; Bando, Y; Xu, F F; Tang, C C ^[1]

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1. Advanced Materials Laboratory, National Institute for Materials Science, Namiki 1-1, Tsukuba, Ibaraki 305-0044 (Japan)

The effect of growth temperature on morphology, structure, and photoluminescence (PL) of Eu-doped GaN (GaN:Eu) films grown by magnetron sputtering, and the relationships of growth-temperature-structure-PL were investigated by x-ray diffraction, scanning electron microscopy, transmission electron microscopy, and PL. The films grown at room temperature (RT), 573 K, and 773 K are composed of random crystalline grains, c-oriented GaN nanorods with lots of stacking faults, and well-crystalline c-oriented GaN, respectively. The characteristic emission lines of the Eu{sup 3+} were observed in the PL spectra at room temperature for the 573-K-grown and 773-K-grown films, while no emission line for the RT-grown film. The PL intensity from the 773-K-grown film is much stronger than that from the 573-K-grown film.

• OSTI ID: 20634450
• Journal Information: Applied Physics Letters, Vol. 85, Issue 21; Other Information: DOI: 10.1063/1.1825619; (c) 2004 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
DEPOSITION
DOPED MATERIALS
EUROPIUM IONS
GALLIUM NITRIDES
MAGNETRONS
MORPHOLOGY
NANOSTRUCTURES
PHOTOLUMINESCENCE
RANDOMNESS
SCANNING ELECTRON MICROSCOPY
SEMICONDUCTOR MATERIALS
SPUTTERING
STACKING FAULTS
SURFACES
TEMPERATURE RANGE 0273-0400 K
TEMPERATURE RANGE 0400-1000 K
THIN FILMS
TRANSMISSION ELECTRON MICROSCOPY
X-RAY DIFFRACTION