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Title: The 1.54-{mu}m photoluminescence from an (Er, Ge) co-doped SiO{sub 2} film deposited on Si by rf magnetron sputtering

Abstract

In this work, we report on quite strong 1.54-{mu}m photoluminescence (PL) from an (Er, Ge) co-doped SiO{sub 2} film deposited by rf magnetron sputtering. The PL intensity reaches a maximum value after the film is annealed at 700 deg. C for 30 min in N{sub 2}. High-resolution transmission electron microscopy observation, together with energy dispersive x-ray spectroscopy analysis, indicates that amorphous Ge-rich nanoclusters precipitate in the film after 700 deg. C annealing. X-ray diffraction shows the presence of Ge nanocrystals after 900 deg. C annealing, and increasing Ge nanocrystal size with increasing annealing temperature up to 1100 deg. C. The results suggest that the amorphous Ge-rich nanoclusters are more effective than Ge nanocrystals in exciting the Er{sup 3+} PL.

Authors:
; ; ; ; ;  [1]
  1. Department of Physics, University of Oslo, N-0316 Oslo (Norway)
Publication Date:
OSTI Identifier:
20634408
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 85; Journal Issue: 19; Other Information: DOI: 10.1063/1.1819514; (c) 2004 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; AMORPHOUS STATE; ANNEALING; DEPOSITION; DOPED MATERIALS; ERBIUM IONS; GERMANIUM IONS; MAGNETRONS; NANOSTRUCTURES; PHOTOLUMINESCENCE; SILICON OXIDES; SPUTTERING; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE 1000-4000 K; THIN FILMS; TIME DEPENDENCE; TRANSMISSION ELECTRON MICROSCOPY; X-RAY DIFFRACTION; X-RAY SPECTROSCOPY

Citation Formats

Heng, C L, Finstad, T G, Storaas, P, Li, Y J, Gunnaes, A E, Nilsen, O, SINTEF ICT, Department of Microsystems and Nanotechnology, N-0314 Oslo, Centre for Materials Science and Nanotechnology, Department of Physics, University of Oslo, N-0349, and Department of Chemistry, University of Oslo, N-0315. The 1.54-{mu}m photoluminescence from an (Er, Ge) co-doped SiO{sub 2} film deposited on Si by rf magnetron sputtering. United States: N. p., 2004. Web. doi:10.1063/1.1819514.
Heng, C L, Finstad, T G, Storaas, P, Li, Y J, Gunnaes, A E, Nilsen, O, SINTEF ICT, Department of Microsystems and Nanotechnology, N-0314 Oslo, Centre for Materials Science and Nanotechnology, Department of Physics, University of Oslo, N-0349, & Department of Chemistry, University of Oslo, N-0315. The 1.54-{mu}m photoluminescence from an (Er, Ge) co-doped SiO{sub 2} film deposited on Si by rf magnetron sputtering. United States. doi:10.1063/1.1819514.
Heng, C L, Finstad, T G, Storaas, P, Li, Y J, Gunnaes, A E, Nilsen, O, SINTEF ICT, Department of Microsystems and Nanotechnology, N-0314 Oslo, Centre for Materials Science and Nanotechnology, Department of Physics, University of Oslo, N-0349, and Department of Chemistry, University of Oslo, N-0315. Mon . "The 1.54-{mu}m photoluminescence from an (Er, Ge) co-doped SiO{sub 2} film deposited on Si by rf magnetron sputtering". United States. doi:10.1063/1.1819514.
@article{osti_20634408,
title = {The 1.54-{mu}m photoluminescence from an (Er, Ge) co-doped SiO{sub 2} film deposited on Si by rf magnetron sputtering},
author = {Heng, C L and Finstad, T G and Storaas, P and Li, Y J and Gunnaes, A E and Nilsen, O and SINTEF ICT, Department of Microsystems and Nanotechnology, N-0314 Oslo and Centre for Materials Science and Nanotechnology, Department of Physics, University of Oslo, N-0349 and Department of Chemistry, University of Oslo, N-0315},
abstractNote = {In this work, we report on quite strong 1.54-{mu}m photoluminescence (PL) from an (Er, Ge) co-doped SiO{sub 2} film deposited by rf magnetron sputtering. The PL intensity reaches a maximum value after the film is annealed at 700 deg. C for 30 min in N{sub 2}. High-resolution transmission electron microscopy observation, together with energy dispersive x-ray spectroscopy analysis, indicates that amorphous Ge-rich nanoclusters precipitate in the film after 700 deg. C annealing. X-ray diffraction shows the presence of Ge nanocrystals after 900 deg. C annealing, and increasing Ge nanocrystal size with increasing annealing temperature up to 1100 deg. C. The results suggest that the amorphous Ge-rich nanoclusters are more effective than Ge nanocrystals in exciting the Er{sup 3+} PL.},
doi = {10.1063/1.1819514},
journal = {Applied Physics Letters},
issn = {0003-6951},
number = 19,
volume = 85,
place = {United States},
year = {2004},
month = {11}
}