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Title: Low-resistance and high-reflectance Ni/Ag/Ru/Ni/Au ohmic contact on p-type GaN

Abstract

We report a metallization scheme of low-resistance, high-reflectance, and thermally-stable ohmic contact on p-type GaN. The specific contact resistivity as low as 5.2x10{sup -5} {omega} cm{sup 2} and the high reflectance of 91% were simultaneously obtained from Ni (50 A )/Ag (1200 A)/Ru (500 A)/Ni (200 A)/Au (500 A) contact annealed at 500 deg. C in O{sub 2} ambient. The oxidation annealing promoted the outdiffusion of Ga atoms to dissolve in the Ag layer, leaving Ga vacancies below the contact. The Ru layer could act as a diffusion barrier for intermixing of the reflective Ag with upper layers of Ni and Au. Thus, suppression of the intermixing results in the high reflectance and good thermal stability of the contact.

Authors:
;  [1]
  1. Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang, Kyungbuk 790-784 (Korea, Republic of)
Publication Date:
OSTI Identifier:
20634405
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 85; Journal Issue: 19; Other Information: DOI: 10.1063/1.1819981; (c) 2004 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ANNEALING; DIFFUSION BARRIERS; GALLIUM NITRIDES; GOLD; LAYERS; NICKEL; OXIDATION; REFLECTIVITY; RUTHENIUM; SEMICONDUCTOR MATERIALS; SILVER; TEMPERATURE RANGE 0400-1000 K; VACANCIES

Citation Formats

Jang, Ho Won, and Lee, Jong-Lam. Low-resistance and high-reflectance Ni/Ag/Ru/Ni/Au ohmic contact on p-type GaN. United States: N. p., 2004. Web. doi:10.1063/1.1819981.
Jang, Ho Won, & Lee, Jong-Lam. Low-resistance and high-reflectance Ni/Ag/Ru/Ni/Au ohmic contact on p-type GaN. United States. https://doi.org/10.1063/1.1819981
Jang, Ho Won, and Lee, Jong-Lam. 2004. "Low-resistance and high-reflectance Ni/Ag/Ru/Ni/Au ohmic contact on p-type GaN". United States. https://doi.org/10.1063/1.1819981.
@article{osti_20634405,
title = {Low-resistance and high-reflectance Ni/Ag/Ru/Ni/Au ohmic contact on p-type GaN},
author = {Jang, Ho Won and Lee, Jong-Lam},
abstractNote = {We report a metallization scheme of low-resistance, high-reflectance, and thermally-stable ohmic contact on p-type GaN. The specific contact resistivity as low as 5.2x10{sup -5} {omega} cm{sup 2} and the high reflectance of 91% were simultaneously obtained from Ni (50 A )/Ag (1200 A)/Ru (500 A)/Ni (200 A)/Au (500 A) contact annealed at 500 deg. C in O{sub 2} ambient. The oxidation annealing promoted the outdiffusion of Ga atoms to dissolve in the Ag layer, leaving Ga vacancies below the contact. The Ru layer could act as a diffusion barrier for intermixing of the reflective Ag with upper layers of Ni and Au. Thus, suppression of the intermixing results in the high reflectance and good thermal stability of the contact.},
doi = {10.1063/1.1819981},
url = {https://www.osti.gov/biblio/20634405}, journal = {Applied Physics Letters},
issn = {0003-6951},
number = 19,
volume = 85,
place = {United States},
year = {Mon Nov 08 00:00:00 EST 2004},
month = {Mon Nov 08 00:00:00 EST 2004}
}